Thermal optimization of two-terminal SOT-MRAM von Su, Haotian, Kwon, Heungdong, Hwang, William, Xue, Fen, Köroğlu, Çağıl, Tsai, Wilman, Asheghi, Mehdi, Goodson, Kenneth E., Wang, Shan X., Pop, Eric

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Observation of anti-damping spin–orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3 von DC, Mahendra, Shao, Ding-Fu, Hou, Vincent D.-H., Vailionis, Arturas, Quarterman, P., Habiboglu, Ali, Venuti, M. B., Xue, Fen, Huang, Yen-Lin, Lee, Chien-Min, Miura, Masashi, Kirby, Brian, Bi, Chong, Li, Xiang, Deng, Yong, Lin, Shy-Jay, Tsai, Wilman, Eley, Serena, Wang, Wei-Gang, Borchers, Julie A., Tsymbal, Evgeny Y., Wang, Shan X.

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Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N von Xue, Fen, Lin, Shy-Jay, Song, Mingyuan, Hwang, William, Klewe, Christoph, Lee, Chien-Min, Turgut, Emrah, Shafer, Padraic, Vailionis, Arturas, Huang, Yen-Lin, Tsai, Wilman, Bao, Xinyu, Wang, Shan X.

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Tunable spin–orbit torque efficiency in in-plane and perpendicular magnetized [Pt/Co]n multilayer von Xue, Fen, Lin, Shy-Jay, DC, Mahendra, Bi, Chong, Li, Xiang, Tsai, Wilman, Wang, Shan X.

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Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf0.5Zr0.5O2 Thin Film Capacitors von Saini, Balreen, Huang, Fei, Choi, Yoon‐Young, Yu, Zhouchangwan, Thampy, Vivek, Baniecki, John D., Tsai, Wilman, McIntyre, Paul C.

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Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors von Schulte-Braucks, Christian, Pandey, Rahul, Sajjad, Redwan Noor, Barth, Mike, Ghosh, Ram Krishna, Grisafe, Ben, Sharma, Pankaj, von den Driesch, Nils, Vohra, Anurag, Rayner, Gilbert Bruce, Loo, Roger, Mantl, Siegfried, Buca, Dan, Chih-Chieh Yeh, Cheng-Hsien Wu, Tsai, Wilman, Antoniadis, Dimitri A., Datta, Suman

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Germanium n -type shallow junction activation dependences von Chui, Chi On, Kulig, Leonard, Moran, Jean, Tsai, Wilman, Saraswat, Krishna C.

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Spin–orbit torques of an in-plane magnetized system modulated by the spin transport in the ferromagnetic Co layer von Xue, Fen, Lin, Shy-Jay, Li, Peng, Hwang, William, Huang, Yen-Lin, Tsai, Wilman, Wang, Shan X.

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Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory von Li, Xiang, Lin, Shy-Jay, Dc, Mahendra, Liao, Yu-Ching, Yao, Chengyang, Naeemi, Azad, Tsai, Wilman, Wang, Shan X.

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The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces von Lin, H. C., Brammertz, Guy, Martens, Koen, de Valicourt, Guilhem, Negre, Laurent, Wang, Wei-E, Tsai, Wilman, Meuris, Marc, Heyns, Marc

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How Important Is the Metal–Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus? von Yang, Lingming, Charnas, Adam, Qiu, Gang, Lin, Yu-Ming, Lu, Chun-Chieh, Tsai, Wilman, Paduano, Qing, Snure, Michael, Ye, Peide D

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Arsenic-dominated chemistry in the acid cleaning of InGaAs and InAlAs surfaces von Sun, Yun, Pianetta, Piero, Chen, Po-Ta, Kobayashi, Masaharu, Nishi, Yoshio, Goel, Niti, Garner, Michael, Tsai, Wilman

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Atomic layer deposition of hafnium oxide on germanium substrates von Delabie, Annelies, Puurunen, Riikka L., Brijs, Bert, Caymax, Matty, Conard, Thierry, Onsia, Bart, Richard, Olivier, Vandervorst, Wilfried, Zhao, Chao, Heyns, Marc M., Meuris, Marc, Viitanen, Minna M., Brongersma, Hidde H., de Ridder, Marco, Goncharova, Lyudmila V., Garfunkel, Eric, Gustafsson, Torgny, Tsai, Wilman

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Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2 von Yang, Lingming, Majumdar, Kausik, Liu, Han, Du, Yuchen, Wu, Heng, Hatzistergos, Michael, Hung, P. Y, Tieckelmann, Robert, Tsai, Wilman, Hobbs, Chris, Ye, Peide D

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High-Density STT-Assisted SOT-MRAM (SAS-MRAM) for Energy-Efficient AI Applications von Xue, Fen, Hwang, William, Zhang, Fan, Tsai, Wilman, Fan, Deliang, Wang, Shan X.

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On-Device Continual Learning With STT-Assisted-SOT MRAM-Based In-Memory Computing von Zhang, Fan, Sridharan, Amitesh, Hwang, William, Xue, Fen, Tsai, Wilman, Wang, Shan Xiang, Fan, Deliang

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Atomic Layer Deposition of WO3‑Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors von Yoo, Chanyoung, Hartanto, Jonathan, Saini, Balreen, Tsai, Wilman, Thampy, Vivek, Niavol, Somayeh Saadat, Meng, Andrew C., McIntyre, Paul C.

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Atomic Layer Deposition of WO 3 -Doped In 2 O 3 for Reliable and Scalable BEOL-Compatible Transistors von Yoo, Chanyoung, Hartanto, Jonathan, Saini, Balreen, Tsai, Wilman, Thampy, Vivek, Niavol, Somayeh Saadat, Meng, Andrew C, McIntyre, Paul C

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The effects of wet surface clean and in situ interlayer on In0.52Al0.48As metal-oxide-semiconductor characteristics von Kobayashi, Masaharu, Thareja, Gaurav, Sun, Yun, Goel, Niti, Garner, Mike, Tsai, Wilman, Pianetta, Piero, Nishi, Yoshio

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Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) With Four Bits per SOT Programming Line von Hwang, William, Xue, Fen, Song, Ming-Yuan, Hsu, Chen-Feng, Chen, T. C., Tsai, Wilman, Bao, Xinyu, Wang, Shan X.

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