Ga2Te3Sb5—A Candidate for Fast and Ultralong Retention Phase‐Change Memory von Kao, Kin‐Fu, Lee, Chain‐Ming, Chen, Ming‐Jung, Tsai, Ming‐Jinn, Chin, Tsung‐Shune

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Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications von Chang, Wen-Yuan, Lai, Yen-Chao, Wu, Tai-Bor, Wang, Sea-Fue, Chen, Frederick, Tsai, Ming-Jinn

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Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films von Chen, Min-Chen, Chang, Ting-Chang, Tsai, Chih-Tsung, Huang, Sheng-Yao, Chen, Shih-Ching, Hu, Chih-Wei, Sze, Simon M., Tsai, Ming-Jinn

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Formation and Instability of Silver Nanofilament in Ag-Based Programmable Metallization Cells von Hsiung, Chang-Po, Liao, Hsin-Wei, Gan, Jon-Yiew, Wu, Tai-Bo, Hwang, Jenn-Chang, Chen, Frederick, Tsai, Ming-Jinn

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Low Store Energy, Low VDDmin, 8T2R Nonvolatile Latch and SRAM With Vertical-Stacked Resistive Memory (Memristor) Devices for Low Power Mobile Applications von CHIU, Pi-Feng, CHANG, Meng-Fan, WU, Che-Wei, CHUANG, Ching-Hao, SHEU, Shyh-Shyuan, CHEN, Yu-Sheng, TSAI, Ming-Jinn

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A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes von Meng-Fan Chang, Shyh-Shyuan Sheu, Ku-Feng Lin, Che-Wei Wu, Chia-Chen Kuo, Pi-Feng Chiu, Yih-Shan Yang, Yu-Sheng Chen, Heng-Yuan Lee, Chen-Hsin Lien, Chen, F. T., Keng-Li Su, Tzu-Kun Ku, Ming-Jer Kao, Ming-Jinn Tsai

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Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface von Rahaman, Sheikh Ziaur, Maikap, Siddheswar, Tien, Ta-Chang, Lee, Heng-Yuan, Chen, Wei-Su, Chen, Frederick T, Kao, Ming-Jer, Tsai, Ming-Jinn

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Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices von Tsai, Yu-Ting, Chang, Ting-Chang, Huang, Wei-Li, Huang, Chih-Wen, Syu, Yong-En, Chen, Shih-Cheng, Sze, Simon M., Tsai, Ming-Jinn, Tseng, Tseung-Yuen

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Counter-Doped JTE, an Edge Termination for HV SiC Devices With Increased Tolerance to the Surface Charge von Chih-Fang Huang, Hua-Chih Hsu, Kuan-Wei Chu, Li-Heng Lee, Ming-Jinn Tsai, Kung-Yen Lee, Feng Zhao

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Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors von Min Hung Lee, Wei, Y.-T, Liu, C., Huang, J.-J, Ming Tang, Yu-Lun Chueh, Chu, K.-Y, Miin-Jang Chen, Heng-Yuan Lee, Yu-Sheng Chen, Li-Heng Lee, Ming-Jinn Tsai

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Metal-Oxide RRAM von Wong, H.-S. Philip, Lee, Heng-Yuan, Yu, Shimeng, Chen, Yu-Sheng, Wu, Yi, Chen, Pang-Shiu, Lee, Byoungil, Chen, Frederick T., Tsai, Ming-Jinn

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Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications von Tsung-Ming Tsai, Kuan-Chang Chang, Ting-Chang Chang, Yong-En Syu, Siang-Lan Chuang, Geng-Wei Chang, Guan-Ru Liu, Min-Chen Chen, Hui-Chun Huang, Shih-Kun Liu, Ya-Hsiang Tai, Der-Shin Gan, Ya-Liang Yang, Tai-Fa Young, Bae-Heng Tseng, Kai-Huang Chen, Ming-Jinn Tsai, Cong Ye, Hao Wang, Sze, S. M.

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Microalgae Growth and Morphology of Skeletonema costatum On Physiological Stress Nutrient Silicon (Si) von Setyaningsi, Endang Purwanti, Nurhidayati, Tutik, Pratiwi, Syam, Nurhatika, Sri, Ermavitalini, Dini, Muhibuddin, Anton, Purwani, Kristanti Indah, Setiawan, And Edwin, Chen, Frederick, Tsai, Ming-Jinn

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28-nm 2T High- K Metal Gate Embedded RRAM With Fully Compatible CMOS Logic Processes von Chin Yu Mei, Wen Chao Shen, Chun Hsiung Wu, Yue-Der Chih, Ya-Chin King, Chrong Jung Lin, Ming-Jinn Tsai, Kan-Hsueh Tsai, Chen, Frederick T.

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Low-Power MCU With Embedded ReRAM Buffers as Sensor Hub for IoT Applications von Chien, Tsai-Kan, Chiou, Lih-Yih, Sheu, Shyh-Shyuan, Lin, Jing-Cian, Lee, Chang-Chia, Ku, Tzu-Kun, Tsai, Ming-Jinn, Wu, Chih-I

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Area-Efficient Embedded Resistive RAM (ReRAM) Macros Using Logic-Process Vertical-Parasitic-BJT (VPBJT) Switches and Read-Disturb-Free Temperature-Aware Current-Mode Read Scheme von Meng-Fan Chang, Chia-Chen Kuo, Shyh-Shyuan Sheu, Chorng-Jung Lin, Ya-Chin King, Chen, Frederick T., Tzu-Kun Ku, Ming-Jinn Tsai, Jui-Jen Wu, Yue-Der Chih

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Interfacial and annealing effects on magnetic properties of CoFeB thin films von Wang, Yung-Hung, Chen, Wei-Chuan, Yang, Shan-Yi, Shen, Kuei-Hung, Park, Chando, Kao, Ming-Jer, Tsai, Ming-Jinn

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Device Size-Dependent Improved Resistive Switching Memory Performance von Prakash, Amit, Maikap, Siddheswar, Wei-Su Chen, Heng-Yuan Lee, Chen, Fred, Ta-Chang Tien, Chao-Sung Lai, Ming-Jinn Tsai

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Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide von Jheng-Jie Huang, Ting-Chang Chang, Jyun-Bao Yang, Shih-Ching Chen, Po-Chun Yang, Yu-Ting Chen, Hsueh-Chih Tseng, Sze, S. M., Ann-Kuo Chu, Ming-Jinn Tsai

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Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications von HUANG, Sheng-Yao, CHANG, Ting-Chang, CHEN, Min-Chen, CHEN, Shih-Ching, LO, Hung-Ping, HUANG, Hui-Chun, GAN, Der-Shin, SZE, Simon M, TSAI, Ming-Jinn

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