Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap von Jayaprakash, R., Kalaitzakis, F. G., Christmann, G., Tsagaraki, K., Hocevar, M., Gayral, B., Monroy, E., Pelekanos, N. T.

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Effects of ultrathin AlN prelayers on the spontaneous growth of GaN nanowires by plasma assisted molecular beam epitaxy von Eftychis, S., Kruse, J.E., Tsagaraki, K., Koukoula, T., Kehagias, Th, Komninou, Ph, Georgakilas, A.

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Study of low temperature rf-sputtered Mg-doped vanadium dioxide thermochromic films deposited on low-emissivity substrates von Gagaoudakis, E., Kortidis, I., Michail, G., Tsagaraki, K., Binas, V., Kiriakidis, G., Aperathitis, E.

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Nanofabrication of normally-off GaN vertical nanowire MESFETs von Doundoulakis, G, Adikimenakis, A, Stavrinidis, A, Tsagaraki, K, Androulidaki, M, Iacovella, F, Deligeorgis, G, Konstantinidis, G, Georgakilas, A

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InN: Breaking the limits of solid-state electronics von Kuzmík, J., Adikimenakis, A., Ťapajna, M., Gregušová, D., Haščík, Š., Dobročka, E., Tsagaraki, K., Stoklas, R., Georgakilas, A.

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In-situ SiNx/InN structures for InN field-effect transistors von Zervos, Ch, Adikimenakis, A., Beleniotis, P., Kostopoulos, A., Kayambaki, M., Tsagaraki, K., Konstantinidis, G., Georgakilas, A.

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Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy von Kruse, J. E., Lymperakis, L., Eftychis, S., Adikimenakis, A., Doundoulakis, G., Tsagaraki, K., Androulidaki, M., Olziersky, A., Dimitrakis, P., Ioannou-Sougleridis, V., Normand, P., Koukoula, T., Kehagias, Th, Komninou, Ph, Konstantinidis, G., Georgakilas, A.

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Extraction of absorption coefficients from as-grown GaN nanowires on opaque substrates using all-optical method von Jayaprakash, R, Ajagunna, D, Germanis, S, Androulidaki, M, Tsagaraki, K, Georgakilas, A, Pelekanos, N T

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Structural anisotropic properties of a -plane GaN epilayers grown on r -plane sapphire by molecular beam epitaxy von Lotsari, A., Kehagias, Th, Tsiakatouras, G., Tsagaraki, K., Katsikini, M., Arvanitidis, J., Christofilos, D., Ves, S., Komninou, Ph, Georgakilas, A., Dimitrakopulos, G. P.

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Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer von Bairamis, A., Zervos, Ch, Adikimenakis, A., Kostopoulos, A., Kayambaki, M., Tsagaraki, K., Konstantinidis, G., Georgakilas, A.

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Effect of rapid thermal annealing on polycrystalline InGaN thin films deposited on fused silica substrates von Kazazis, S.A., Papadomanolaki, E., Androulidaki, M., Tsagaraki, K., Kostopoulos, A., Aperathitis, E., Iliopoulos, E.

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Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors von Zervos, Ch, Adikimenakis, A, Bairamis, A, Kostopoulos, A, Kayambaki, M, Tsagaraki, K, Konstantinidis, G, Georgakilas, A

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Ultra-smooth GaN membranes by photo-electrochemical etching for photonic applications von Jayaprakash, R., Kalaitzakis, F. G., Kayambaki, M., Tsagaraki, K., Monroy, E., Pelekanos, N. T.

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Growth mechanism and microstructure of low defect density InN (0001) In-face thin films on Si (111) substrates von Kehagias, Th, Dimitrakopulos, G. P., Ajagunna, A. O., Koukoula, T., Tsagaraki, K., Adikimenakis, A., Komninou, Ph, Georgakilas, A.

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6.3-GHz Film Bulk Acoustic Resonator Structures Based on a Gallium Nitride/Silicon Thin Membrane von Muller, A., Neculoiu, D., Konstantinidis, G., Stavrinidis, A., Vasilache, D., Cismaru, A., Danila, M., Dragoman, M., Deligeorgis, G., Tsagaraki, K.

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Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications von Moratis, K., Tan, S. L., Germanis, S., Katsidis, C., Androulidaki, M., Tsagaraki, K., Hatzopoulos, Z., Donatini, F., Cibert, J., Niquet, Y. -M., Mariette, H., Pelekanos, N. T.

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Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy von Dimakis, E., Iliopoulos, E., Tsagaraki, K., Kehagias, Th, Komninou, Ph, Georgakilas, A.

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Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy von Dimakis, E., Iliopoulos, E., Tsagaraki, K., Adikimenakis, A., Georgakilas, A.

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Non-polar GaN/AlGaN quantum-well polariton laser at room temperature von Amargianitakis, E. A., Tsagaraki, K., Kostopoulos, A., Konstantinidis, G., Delamadeleine, E., Monroy, E., Pelekanos, N. T.

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Bandgap, electrical and structural properties of thick InN (0001) films grown under optimal conditions von Adikimenakis, A., Androulidaki, M., Foundoulaki Salhin, E., Tsagaraki, K., Doundoulakis, G., Kuzmik, J., Georgakilas, A.

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