High thermal stability of abrupt SiO2/GaN interface with low interface state density von Truyen, Nguyen Xuan, Taoka, Noriyuki, Ohta, Akio, Makihara, Katsunori, Yamada, Hisashi, Takahashi, Tokio, Ikeda, Mitsuhisa, Shimizu, Mitsuaki, Miyazaki, Seiichi

Volltext

Total photoelectron yield spectroscopy of energy distribution of electronic states density at GaN surface and SiO2/GaN interface von Ohta, Akio, Truyen, Nguyen Xuan, Fujimura, Nobuyuki, Ikeda, Mitsuhisa, Makihara, Katsunori, Miyazaki, Seiichi

Volltext

Low-temperature formation of Ga-oxide/GaN interface with remote oxygen plasma and its interface properties von Yamamoto, Taishi, Taoka, Noriyuki, Ohta, Akio, Truyen, Nguyen Xuan, Yamada, Hisashi, Takahashi, Tokio, Ikeda, Mitsuhisa, Makihara, Katsunori, Shimizu, Mitsuaki, Miyazaki, Seiichi

Volltext

Interface properties of SiO2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He von Truyen, Nguyen Xuan, Taoka, Noriyuki, Ohta, Akio, Makihara, Katsunori, Yamada, Hisashi, Takahashi, Tokio, Ikeda, Mitsuhisa, Shimizu, Mitsuaki, Miyazaki, Seiichi

Volltext

Impact of remote plasma oxidation of a GaN surface on photoluminescence properties von Takada, Noriharu, Taoka, Noriyuki, Yamamoto, Taishi, Ohta, Akio, Truyen, Nguyen Xuan, Yamada, Hisashi, Takahashi, Tokio, Ikeda, Mitsuhisa, Makihara, Katsunori, Shimizu, Mitsuaki, Miyazaki, Seiichi

Volltext

Effects of remote hydrogen plasma on chemical bonding features and electronic states of 4H-SiC(0001) surface von Truyen, Nguyen Xuan, Ohta, Akio, Makihara, Katsunori, Ikeda, Mitsuhisa, Miyazaki, Seiichi

Volltext

Total photoelectron yield spectroscopy of energy distribution of electronic states density at GaN surface and SiO 2 /GaN interface von Ohta, Akio, Truyen, Nguyen Xuan, Fujimura, Nobuyuki, Ikeda, Mitsuhisa, Makihara, Katsunori, Miyazaki, Seiichi

Volltext

Characterization of remote O 2 -plasma-enhanced CVD SiO 2 /GaN(0001) structure using photoemission measurements von Truyen, Nguyen Xuan, Ohta, Akio, Makihara, Katsunori, Ikeda, Mitsuhisa, Miyazaki, Seiichi

Volltext

Characterization of remote O^sub 2^-plasma-enhanced CVD SiO^sub 2^/GaN(0001) structure using photoemission measurements von Truyen, Nguyen Xuan, Ohta, Akio, Makihara, Katsunori, Ikeda, Mitsuhisa, Miyazaki, Seiichi

Volltext

Comparative study of photoluminescence properties obtained from SiO 2 /GaN and Al 2 O 3 /GaN structures von Takada, Noriharu, Taoka, Noriyuki, Ohta, Akio, Yamamoto, Taishi, Truyen, Nguyen Xuan, Yamada, Hisashi, Takahashi, Tokio, Ikeda, Mitsuhisa, Makihara, Katsunori, Shimizu, Mitsuaki, Miyazaki, Seiichi

Volltext

Interface properties of SiO^sub 2^/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He von Truyen, Nguyen Xuan, Taoka, Noriyuki, Ohta, Akio, Makihara, Katsunori, Yamada, Hisashi, Takahashi, Tokio, Ikeda, Mitsuhisa, Shimizu, Mitsuaki, Miyazaki, Seiichi

Volltext

High thermal stability of abrupt SiO 2 /GaN interface with low interface state density von Truyen, Nguyen Xuan, Taoka, Noriyuki, Ohta, Akio, Makihara, Katsunori, Yamada, Hisashi, Takahashi, Tokio, Ikeda, Mitsuhisa, Shimizu, Mitsuaki, Miyazaki, Seiichi

Volltext

High thermal stability of abrupt SiO^sub 2^/GaN interface with low interface state density von Truyen, Nguyen Xuan, Taoka, Noriyuki, Ohta, Akio, Makihara, Katsunori, Yamada, Hisashi, Takahashi, Tokio, Ikeda, Mitsuhisa, Shimizu, Mitsuaki, Miyazaki, Seiichi

Volltext

Photoluminescence properties from SiO2/Ga2O3/GaN structure formed with remote plasma von Takada, Noriharu, Taoka, Noriyuki, Ohta, Akio, Yamamoto, Taishi, Xuan, Truyen Nguyen, Yamada, Hisashi, Takahashi, Tokio, Ikeda, Mitsuhisa, Makihara, Katsunori, Shimizu, Mitsuaki, Miyazaki, Seiichi

Volltext

Thermal Stability of SiO2/GaN Interface Formed by Remote Plasma CVD von NGUYEN, TRUYEN XUAN, Taoka, Noriyuki, Ohta, Akio, Yamada, Hisashi, Takahashi, Tokio, Ikeda, Mitsuhisa, Makihara, Katsunori, Shimizu, Mitsuaki, Miyazaki, Seiichi

Volltext

Evaluation of Electron Affinity of GaN(0001) by Vacuum Ultraviolet Photoelectron Spectroscopy von Imagawa, Takuya, Ohta, Akio, Fujimura, Nobuyuki, Xuan, Truyen Nguyen, Ikeda, Mitsuhisa, Makihara, Katsunori, Kachi, Tetsu, Shiozaki, Koji, MIyazaki, Seiichi

Volltext

Photoemission Study of Remote Plasma CVD SiO2/GaN Interfaces von NGUYEN, TRUYEN XUAN, Ohta, Akio, Makihara, Katsunori, Ikeda, Mitsuhisa, Miyazaki, Seichi

Volltext

Relationships between Properties near Conduction Band Edge at Al2O3/GaN Interface and Annealing Temperatures von Taoka, Noriyuki, Kobayashi, Takayuki, Nakamura, Masayuki, Sagawa, Tatsuro, Truyen, Nguyen Xuan, Ohta, Akio, Yamada, Hisashi, Takahashi, Tokio, Ikeda, Mitsuhisa, Makihara, Katsunori, Kubo, Toshiharu, Yamada, Toshikazu, Egawa, Takashi, Miyazaki, Seiichi, Motoyama, Shin-ich, Shimizu, Mitsuaki

Volltext

Photoluminescence from n-GaN oxidized by remote plasma von Takada, Noriharu, Yamamoto, Taishi, Taoka, Noriyuki, Ohta, Akio, Xuan, Truyen Nguyen, Yamada, Hisashi, Takahashi, Tokio, Ikeda, Mitsuhisa, Makihara, Katsunori, Shimizu, Mitsuaki, Miyazaki, Seiichi

Volltext

リモートプラズマによる表面洗浄とSiO2/GaN構造のin-situ形成 von 田岡, 紀之, グェンスァン, チュン, 山本, 泰史, 大田, 晃生, 山田, 永, 高橋, 言緒, 池田, 弥央, 牧原, 克典, 宮崎, 誠一, 清水, 三聡

Volltext