Enhancing the Circular Polarization of Spin Light-Emitting Diodes by Processing in Selenium Vapor von Dorokhin, M. V., Demina, P. B., Budanov, A. V., Vlasov, Yu. N., Kotov, G. I., Zdoroveyshchev, A. V., Trushin, V. N., Zvonkov, B. N.

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Formation of a Fine-Grained Si1–xGexThermoelectric by Spark Plasma Sintering von Dorokhin, M. V., Boldin, M. S., Uskova, E. A., Boryakov, A. V., Demina, P. B., Erofeeva, I. V., Zdoroveyshchev, A. V., Kotomina, V. E., Kuznetsov, Yu. M., Lantsev, E. A., Popov, A. A., Trushin, V. N.

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Growth defects in GeSn/Ge/Si(001) epitaxial layers grown by hot wire chemical vapor deposition of Ge with co-evaporation of Sn von Shengurov, V.G., Chalkov, V.Yu, Denisov, S.A., Trushin, V.N., Zaitsev, A.V., Nezhdanov, A.V., Pavlov, D.A., Filatov, D.O.

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Formation of epitaxial p-i-n structures on the basis of (In,Fe)Sb and (Ga,Fe)Sb diluted magnetic semiconductors layers von Kudrin, A.V., Lesnikov, V.P., Pavlov, D.A., Usov, Yu.V., Danilov, Yu.A., Dorokhin, M.V., Vikhrova, O.V., Milin, V.E., Kriukov, R.N., Kuznetsov, Yu.M., Trushin, V.N., Sobolev, N.A.

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Non-equilibrium methods for synthesis and modification of gallium oxide von Nikolskaya, A A, Korolev, D S, Mikhaylov, A N, Mullagaliev, T D, Chigirinsky, Yu I, Belov, A I, Nezhdanov, A V, Trushin, V N, Nikolichev, D E, Almaev, A V, Giulian, R, Kumar, M, Tetelbaum, D I

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Gallium-doped germanium epitaxial layers grown on silicon substrates by hot wire chemical vapor deposition von Shengurov, V.G., Denisov, S.A., Yu. Chalkov, V., Filatov, D.O., Kudrin, A.V., Sychyov, S.M., Trushin, V.N., Zaitsev, A.V., Titova, A.M., Alyabina, N.A.

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Control of the Profile and Curvature of the Surface of Single-Crystal Plates of X-Ray Optical Elements Using Piezoelectric Bimorphs von Gribko, V. V., Markelov, A. S., Trushin, V. N., Chuprunov, E. V.

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New functional material: spark plasma sintered Si/SiO2 nanoparticles – fabrication and properties von Dorokhin, M V, Gavva, V A, Ved', M V, Demina, P B, Kuznetsov, Yu M, Erofeeva, I V, Nezhdanov, A V, Boldin, M S, Lantsev, E A, Popov, A A, Trushin, V N, Vikhrova, O V, Boryakov, A V, Yakimov, E B, N Yu Tabachkova

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New functional material: spark plasma sintered Si/SiO 2 nanoparticles - fabrication and properties von Dorokhin, M V, Gavva, V A, Ved', M V, Demina, P B, Kuznetsov, Yu M, Erofeeva, I V, Nezhdanov, A V, Boldin, M S, Lantsev, E A, Popov, A A, Trushin, V N, Vikhrova, O V, Boryakov, A V, Yakimov, E B, Tabachkova, N Yu

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The Influence of the Form of a Curvature Regulator Substrate on the Curvature of the Profile of X-ray Optics Elements von Gribko, V. V., Markelov, A. S., Trushin, V. N., Chuprunov, E. V.

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Manufacturing of Sputtering Composite Targets Containing Phases of Co2FeSi or Co2MnSi Heusler Alloy von Demidov, E. S., Sdobnyakov, V. V., Vazenmiller, G. V., Chigirinskii, Yu. I., Dudin, Yu. A., Lesnikov, V. P., Trushin, V. N., Boldin, M. S., Belkin, O. A., Bobrov, A. A., Sakharov, N. V.

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On controlling the surface curvature of diffraction components von Gribko, V. V., Markelov, A. S., Trushin, V. N., Chuprunov, E. V.

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Low temperature growth of the epitaxial Ge layers on Si(100) by Hot Wire Chemical Vapor Deposition von Matveev, S A, Denisov, S A, Guseinov, D V, Trushin, V N, Nezhdanov, A V, Filatov, D O, Shengurov, V G

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Ion-beam synthesis of GaN in silicon von Sergeev, V A, Korolev, D S, Mikhaylov, A N, Belov, A I, Vasiliev, V K, Smirnov, A E, Nikolitchev, D E, Surodin, S I, Guseinov, D V, Nezhdanov, A V, Markelov, A S, Trushin, V N, Pirogov, A V, Pavlov, D A, Tetelbaum, D I

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On the formation of arrays of single-crystal silicon islands with small angular dispersion von Markelov, A. S., Trushin, V. N., Chuprunov, E. V., Gribko, V. V., Kotomina, V. E., Antonov, I. N., Veselova, L. P.

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Structural disorder and distribution of impurity atoms in β-Ga2O3 under boron ion implantation von Nikolskaya, A.A., Korolev, D.S., Trushin, V.N., Drozdov, M.N., Yunin, P.A., Pitirimova, E.A., Kudrin, A.V., Okulich, E.V., Okulich, V.I., Mikhaylov, A.N., Tetelbaum, D.I.

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Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing von Nikolskaya, A.A., Korolev, D.S., Trushin, V.N., Yunin, P.A., Mikhaylov, A.N., Belov, A.I., Konakov, A.A., Okulich, E.V., Pavlov, D.A., Tetelbaum, D.I.

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Structure and surface morphology of Si1 — x Ge x layers grown on Si/sapphire by molecular beam epitaxy using a sublimation silicon source and gaseous germanium source von Matveev, S. A., Denisov, S. A., Chalkov, V. Yu, Shengurov, V. G., Nikolichev, D. E., Boryakov, A. V., Trushin, V. N., Pitirimova, E. A.

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Formation of a Fine-Grained Si1 – xGex Thermoelectric by Spark Plasma Sintering von Dorokhin, M. V., Boldin, M. S., Uskova, E. A., Boryakov, A. V., Demina, P. B., Erofeeva, I. V., Zdoroveyshchev, A. V., Kotomina, V. E., Kuznetsov, Yu. M., Lantsev, E. A., Popov, A. A., Trushin, V. N.

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Quality of KDP crystals grown on point seeds by a novel rapid growth method von Kim, E. L., Katsman, V. I., Vorontsov, V. V., Portnov, V. N., Trushin, V. N., Markov, K. A.

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