Dynamics of polarization loss and imprint in bilayer ferroelectric tunnel junctions von Barbot, J., Fontanini, R., Segatto, M., Coignus, J., Triozon, F., Carabasse, C., Bedjaoui, M., Andrieu, F., Esseni, D., Grenouillet, L.

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Boron and nitrogen codoping effect on transport properties of carbon nanotubes von Zoubkoff, R., Triozon, F., Niquet, Y.-M., Latil, S.

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Charge transport in chemically doped 2D graphene von Lherbier, Aurélien, Blase, X, Niquet, Yann-Michel, Triozon, François, Roche, Stephan

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Electronic structure investigation of Al0.7Ga0.3As/GaAs nanometric heterostructures by Kelvin force microscopy von Pouch, S, Triozon, F, Chevalier, N, Mélin, T, Niquet, Y.-M, Borowik, .

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Scaling of Trigate nanowire (NW) MOSFETs to sub-7 nm width: 300 K transition to Single Electron Transistor von DESHPANDE, V, BARRAUD, S, TOSTI, L, PREVITALI, B, PERREAU, P, POIROUX, T, SANQUER, M, FAYNOT, O, JEHL, X, WACQUEZ, R, VINET, M, COQUAND, R, ROCHE, B, VOISIN, B, TRIOZON, F, VIZIOZ, C

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Conductance of functionalized nanotubes, graphene and nanowires: from ab initio to mesoscopic physics von Blase, X., Adessi, C., Biel, B., Lopez-Bezanilla, A., Fernández-Serra, M.-V., Margine, E. R., Triozon, F., Roche, S.

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Efficient linear scaling method for computing the Landauer-Büttiker conductance von TRIOZON, F, ROCHE, S

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Gate-dependent magnetoresistance phenomena in carbon nanotubes von FEDOROV, G, LASSAGNE, B, SAGNES, M, RAQUET, B, BROTO, J.-M, TRIOZON, F, ROCHE, S, FLAHAUT, E

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Electron dynamics in silicon nanowire using a Monte-Carlo method von Sarrazin, E, Barraud, S, Bournel, A, Triozon, F

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Poisson-Schrödinger simulation and analytical modeling of inversion charge in FDSOI MOSFET down to 0 K – Towards compact modeling for cryo CMOS application von Aouad, M., Poiroux, T., Martinie, S., Triozon, F., Vinet, M., Ghibaudo, G.

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Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility von Nier, O., Rideau, D., Niquet, Y. M., Monsieur, F., Nguyen, V. H., Triozon, F., Cros, A., Clerc, R., Barbé, J. C., Palestri, P., Esseni, D., Duchemin, I., Smith, L., Silvestri, L., Nallet, F., Tavernier, C., Jaouen, H., Selmi, L.

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Effect of doping on Al2O3/GaN MOS capacitance von Rrustemi, B., Piotrowicz, C., Jaud, M-A., Triozon, F., Vandendaele, W., Mohamad, B., Gwoziecki, R., Ghibaudo, G.

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Competition between magnetic field dependent band structure and coherent backscattering in multiwall carbon nanotubes von Stojetz, B, Roche, S, Miko, C, Triozon, F, Forró, L, Strunk, C

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Orientational Dependence of Charge Transport in Disordered Silicon Nanowires von Persson, Martin P, Lherbier, Aurélien, Niquet, Yann-Michel, Triozon, François, Roche, Stephan

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Quantum transport length scales in silicon-based semiconducting nanowires: Surface roughness effects von Lherbier, Aurélien, Persson, Martin P., Niquet, Yann-Michel, Triozon, François, Roche, Stephan

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Nanometer-scale mechanical properties probed by two-dimensional dynamic force spectroscopy with rigid cantilever von Brun, M., Decossas, S., Triozon, F., Rannou, R., Grévin, B.

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Multiscale simulation of carbon nanotube devices von Adessi, C., Avriller, R., Blase, X., Bournel, A., Cazin d'Honincthun, H., Dollfus, P., Frégonèse, S., Galdin-Retailleau, S., López-Bezanilla, A., Maneux, C., Nha Nguyen, H., Querlioz, D., Roche, S., Triozon, F., Zimmer, T.

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Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities von Deshpande, V., Barraud, S., Jehl, X., Wacquez, R., Vinet, M., Coquand, R., Roche, B., Voisin, B., Triozon, F., Vizioz, C., Tosti, L., Previtali, B., Perreau, P., Poiroux, T., Sanquer, M., Faynot, O.

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Mesoscopic transport in carbon nanotubes: novel features von Latil, S., Roche, S., Triozon, F., Jiang, J., Saito, R.

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Quantum dephasing in carbon nanotubes due to electron-phonon coupling von Roche, Stephan, Jiang, Jie, Triozon, François, Saito, Riichiro

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