Work function tuning of metal nitride electrodes for advanced CMOS devices von Ren, C., Faizhal, B.B., Chan, D.S.H., Li, M.-F., Yeo, Y.-C., Trigg, A.D., Balasubramanian, N., Kwong, D.-L.

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Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance von Ng, C.Y., Chen, T.P., Ding, L., Yang, M., Wong, J.I., Zhao, P., Yang, X.H., Liu, K.Y., Tse, M.S., Trigg, A.D., Fung, S.

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A dual-strained CMOS structure through simultaneous formation of relaxed and compressive strained-SiGe-on-insulator von Bera, L.K., Mukherjee-Roy, M., Abidha, B., Agarwal, A., Loh, W.Y., Tung, C.H., Kumar, R., Trigg, A.D., Foo, Y.L., Tripathy, S., Lo, G.Q., Balasubramanian, N., Kwong, D.L.

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Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition von Loh, T. H., Nguyen, H. S., Tung, C. H., Trigg, A. D., Lo, G. Q., Balasubramanian, N., Kwong, D. L., Tripathy, S.

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Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation von Ding, L., Chen, T. P., Liu, Y., Yang, M., Wong, J. I., Liu, Y. C., Trigg, A. D., Zhu, F. R., Tan, M. C., Fung, S.

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Modular sensor chip design for package stress evaluation and reliability characterisation von Trigg, A.D., Chai, Tai Chong, Zhang, Xiaowu, Chen, Xian Tong, Wai, Leong Ching

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Charge trapping phenomena of tetraethylorthosilicate thin film containing Si nanocrystals synthesized by solid-state reaction von Lau, H W, Tan, O K, Liu, Y, Trigg, D A, Chen, T P

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Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices von Xin Peng Wang, Eu-Jin Lim, A., Hong Yu Yu, Ming-Fu Li, Chi Ren, Wei-Yip Loh, Chun Xiang Zhu, Chin, A., Trigg, A.D., Yee-Chia Yeo, Biesemans, S., Guo-Qiang Lo, Dim-Lee Kwong

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Silicon Nanowire Arrays for Label-Free Detection of DNA von Gao, Zhiqiang, Agarwal, Ajay, Trigg, Alastair D, Singh, Navab, Fang, Cheng, Tung, Chih-Hang, Fan, Yi, Buddharaju, Kavitha D, Kong, Jinming

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WSiN cap for Ohmic contacts to n-GaN with better morphology von Lau, W. S., Singh, B. P., Gunawan, S., Tan, Joy B. H., Jiang, Y. Y., Wynn, Richard Thet, Lim, Vanissa S. W., Trigg, A. D.

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Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistors von Ren, C., Chan, D. S. H., Wang, X. P., Faizhal, B. B., Li, M.-F., Yeo, Y.-C., Trigg, A. D., Agarwal, A., Balasubramanian, N., Pan, J. S., Lim, P. C., Huan, A. C. H., Kwong, D.-L.

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Detection of MicroRNAs Using Target-Guided Formation of Conducting Polymer Nanowires in Nanogaps von Fan, Yi, Chen, Xiantong, Trigg, Alastair D, Tung, Chih-hang, Kong, Jinming, Gao, Zhiqiang

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Charge injection and tunneling mechanism of solid state reaction silicon nanocrystal film von Lau, H. W., Tan, O. K., Trigg, D. A.

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Design and fabrication of a reliability test chip for 3D-TSV von Trigg, A D, Li Hong Yu, Xiaowu Zhang, Chai Tai Chong, Cheng Cheng Kuo, Khan, Navas, Yu Daquan

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Charge injection and tunneling mechanism of solid state reactionsilicon nanocrystal film von Lau, H. W., Tan, O. K., Trigg, D. A.

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A Two-Step Oxidation Mediated Condensation Process for Ultrathin High Ge Content SiGe Epitaxial Films on Insulator von Mukherjee-Roy, M., Agarwal, A., Balakumar, S., Du, A. Y., Trigg, A. D., Kumar, R., Balasubramanian, N., Kwong, D. L.

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Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices von Ren, C., Chan, D.S.H., Faizhal, B.B., Li, M.-F., Yeo, Y.-C., Trigg, A.D., Agarwal, A., Balasubramanian, N., Pan, J.S., Lim, P.C., Kwong, D.-L.

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Dry etching of AlxGa1-xN/GaN by CCl2F2 chemistry for device isolation von Lau, W.S., Singh, B.P., Tan, Joy B.H., Gunawan, S., Jiang, Y.Y., Wynn, Richard Thet, Lim, Vanissa S. W., Trigg, A.D.

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Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation von Yang, M., Chen, T. P., Wong, J. I., Ng, C. Y., Liu, Y., Ding, L., Fung, S., Trigg, A. D., Tung, C. H., Li, C. M.

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Response to "Comment on 'Ultrathin low-temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition'" [ Appl. Phys. L... von Loh, T. H., Nguyen, H. S., Tung, C. H., Trigg, A. D., Lo, G. Q., Balasubramanian, N., Kwong, D. L., Tripathy, S.

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