Junctionless Multiple-Gate Transistors for Analog Applications von Doria, R. T., Pavanello, M. A., Trevisoli, R. D., de Souza, M., Chi-Woo Lee, Ferain, I., Akhavan, N. D., Ran Yan, Razavi, P., Ran Yu, Kranti, A., Colinge, J.

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Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors von Trevisoli, R. D., Doria, R. T., de Souza, M., Das, S., Ferain, I., Pavanello, M. A.

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A physically-based threshold voltage definition, extraction and analytical model for junctionless nanowire transistors von Trevisoli, Renan Doria, Doria, Rodrigo Trevisoli, de Souza, Michelly, Pavanello, Marcelo Antonio

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The zero temperature coefficient in junctionless nanowire transistors von Trevisoli, Renan Doria, Doria, Rodrigo Trevisoli, Souza, Michelly de, Das, Samaresh, Ferain, Isabelle, Pavanello, Marcelo Antonio

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Direct determination of threshold condition in DG-MOSFETs from the gm/ID curve von Cunha, Ana Isabela Araújo, Pavanello, Marcelo Antonio, Trevisoli, Renan Doria, Galup-Montoro, Carlos, Schneider, Marcio Cherem

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An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices von Trevisoli, Renan Doria, Martino, João Antonio, Simoen, Eddy, Claeys, Cor, Pavanello, Marcelo Antonio

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Threshold voltage in junctionless nanowire transistors von Trevisoli, Renan Doria, Doria, Rodrigo Trevisoli, de Souza, Michelly, Pavanello, Marcelo Antonio

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Trap density characterization through low-frequency noise in junctionless transistors von Doria, Rodrigo Trevisoli, Trevisoli, Renan Doria, de Souza, Michelly, Pavanello, Marcelo Antonio

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Trap density characterization through low-frequency noise in junctionless transistors: Insulating Films on Semiconductors 2013 von RODRIGO TREVISOLI DORIA, RENAN DORIA TREVISOLI, DE SOUZA, Michelly, PAVANELLO, Marcelo Antonio

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Direct determination of threshold condition in DG-MOSFETs from the g sub(m)I sub(D)curve von Cunha, Ana Isabela Araujo, Pavanello, Marcelo Antonio, Trevisoli, Renan Doria, Galup-Montoro, Carlos, Schneider, Marcio Cherem

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Direct determination of threshold condition in DG-MOSFETs from the g/I curve von Cunha, Ana Isabela Araújo, Pavanello, Marcelo Antonio, Trevisoli, Renan Doria, Galup-Montoro, Carlos, Schneider, Marcio Cherem

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Performance of Junctionless Nanowire MOSFET as a Quasi-Linear Resistor von de Souza, Michelly, Doria, Rodrigo Trevisoli, Trevisoli, Renan Doria, Cerdeira, Antonio, Estrada, Magali, Pavanello, Marcelo Antonio

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Low Temperature and Silicon Thickness Influences on the Threshold Voltage of Double-Gate MOSFETs Considering a Charge Based Extraction Procedure von Doria, Renan T., Pavanello, Marcelo A.

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Three-Dimensional Simulation of Biaxially Strained Triple-Gate FinFETs: A Method to Compute the Fin Width and Channel Length Dependences on Device Electrical Characteristics von Doria, Renan T., Pavanello, Marcelo A.

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Performance of Junctionless Nanowire MOSFET as a Quasi-Linear Resistor von de Souza, Michelly, Doria, Rodrigo Trevisoli, Trevisoli, Renan Doria, Cerdeira, Antonio, Estrada, Magali, Pavanello, Marcelo Antonio

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Analysis of gate capacitance of n-type junctionless transistors using three-dimensional device simulations von Mariniello, G., Doria, R. T., de Souza, M., Pavanello, M. A., Trevisoli, R. D.

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Drain current model for junctionless nanowire transistors von Trevisoli, R. D., Doria, R. T., de Souza, M., Pavanello, M. A.

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Analysis of the leakage current in junctionless nanowire transistors von Trevisoli, Renan, Trevisoli Doria, Rodrigo, de Souza, Michelly, Antonio Pavanello, Marcelo

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Cross-coupling effects in common-source current mirrors composed by UTBB transistors von José da Costa, Fernando, Trevisoli, Renan, Trevisoli Doria, Rodrigo

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A New Method for Series Resistance Extraction of Nanometer MOSFETs von Trevisoli, Renan, Trevisoli Doria, Rodrigo, de Souza, Michelly, Barraud, Sylvain, Vinet, Maud, Casse, Mikael, Reimbold, Gilles, Faynot, Olivier, Ghibaudo, Gerard, Pavanello, Marcelo Antonio

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