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  1. 1
    Improved compositional uniformity of InGaAsP grown by low pressure metalorganic vapor phase epitaxy using tertiary butyl phosphine as the phosphorus source

    Improved compositional uniformity of InGaAsP grown by low pressure metalorganic vapor phase epitaxy using tertiary butyl phosphine as the phosphorus source von Zilko, J.L., Davisson, P.S., Luther, L., Trapp, K.D.C.

    Veröffentlicht in Journal of crystal growth

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  2. 2
    Improved Compositional Uniformity of lnGaAsP Grown by Low Pressure Metal Organic Vapor Phase Epitaxy Using Tertiary Butyl Phosphine as the Phosphorus Source

    Improved Compositional Uniformity of lnGaAsP Grown by Low Pressure Metal Organic Vapor Phase Epitaxy Using Tertiary Butyl Phosphine as the Phosphorus Source von Zilko, J.L., Davisson, P.S., Luther, L., Trapp, K.D.C.

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