A block-based variational elasto-damage model for masonry analysis inspired from granular micromechanics: Preliminary study von Tran, C.A., Barchiesi, E., Placidi, L., León Trujillo, F.J.

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P-225 von Treff, N.R., Tran, C.A., Miller, K.A., De Matos, D.G., Palmer, S.S., Scott, R.T.

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O-75 von Grund, E.M., Kagan, D., Tran, C.A., Zeitvogel, A., Palmer, S., Nataraja, S.

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O-75: TNF-α regulates the expression of inflammatory and invasive genes via differential kinase signaling in human endometriotic epithelial cells von Grund, E.M., Kagan, D., Tran, C.A., Zeitvogel, A., Palmer, S., Nataraja, S.

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P-225: The human blastomere transcriptome and candidate noninvasive molecular prognostics of preimplantation embryo reproductive competence von Treff, N.R., Tran, C.A., Miller, K.A., De Matos, D.G., Palmer, S.S., Scott, R.T.

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Prostaglandin Addition During Mice In Vitro Maturation (IVM): Its Effect on Embryo Development von Palmer, E., Tran, C.A., Palmer, S., Araldi, G.L., Nataraja, S., De Matos, D.G.

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Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs von Tran, C.A, Karlicek, R.F, Schurman, M, Osinsky, A, Merai, V, Li, Y, Eliashevich, I, Brown, M.G, Nering, J, Ferguson, I, Stall, R

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Gas−Liquid Critical Temperatures of Some Alkenes, Amines, and Cyclic Hydrocarbons von Morton, David W., Lui, Matthew P. W., Tran, Cam A., Young, Colin L.

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GaN and AlGaN metal–semiconductor–metal photodetectors von Ferguson, I, Tran, C.A, Karlicek Jr, R.F, Feng, Z.C, Stall, R, Liang, S, Lu, Y, Joseph, C

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Breakdown of self-limiting behaviour in [formula omitted] heterostructures grown by atomic layer epitaxy von Arès, R., Watkins, S.P., Tran, C.A.

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Slow Spin Relaxation Observed in InGaN/GaN Multiple Quantum Wells von Julier, M., Vinattieri, A., Colocci, M., Lefebvre, P., Gil, B., Scalbert, D., Tran, C.A., Karlicek Jr, R.F., Lascaray, J.-P.

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Time-Resolved Photoluminescence Measurements of InGaN Light-Emitting Diodes von Pophristic, Milan, Tran, C.A., Ferguson, Ian T., Long, F.H.

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Atomic force microscopy study of morphology and dislocation structure of InAs and GaSb grown on highly mismatched substrates von Watkins, S.P., Arès, R., Soerensen, G., Zhong, W., Tran, C.A., Bryce, J.E., Bolognesi, C.R.

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Structural properties of GaN grown by MOVPE turbodisc mass-production reactor von Tran, C.A., Karlicek, R., Schurman, M., Salagaj, T., Cassidy, R., Ferguson, I., Thompson, A.G., Stall, R.A., Hwang, C.-Y.

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Optical Properties of GaN Films Grown on SiC/Si von Steckl, A.J., Tran, C.A., Devrajan, J., Stall, R.A.

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An Investigation of Breakdown Mechanisms in Al(GaN) MSM Photodetectors von Feng, Zhe Chuan, Ferguson, Ian T., Tran, C.A., Joseph, C., Karlicek, R.F., Liang, S., Lu, Y.

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Photoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence Microscope von Feng, Zhe Chuan, Dyer, C.D., Williams, K.P.J., Tran, C.A., Ferguson, Ian T., Schurman, M., Karlicek, B., Stall, R.A., Pitt, G.D., Salagaj, T.

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Growth and characterization of InAs microclusters in InP and InAsP/InP heterostructures by low pressure MOCVD using tertiarybutylarsine von Tran, C.A., Masut, R.A., Brebner, J.L., Leonelli, R., Graham, J.T., Cova, P.

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Growth and characterization of InP on silicon by MOCVD von Tran, C.A., Masut, R.A., Cova, P., Brebner, J.L., Leonelli, R.

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Atomic layer epitaxy and characterization of InP and InAs/InP heterostructures von Tran, C.A., Masut, R.A., Brebner, J.L., Jouanne, M., Salamanca-Riba, L., Shen, C.C., Sieber, B., Miri, A.

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