Improving EBSD precision by orientation refinement with full pattern matching von WINKELMANN, A., JABLON, B.M., TONG, V.S., TRAGER‐COWAN, C., MINGARD, K.P.

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Digital direct electron imaging of energy-filtered electron backscatter diffraction patterns von Vespucci, S., Winkelmann, A., Naresh-Kumar, G., Mingard, K. P., Maneuski, D., Edwards, P. R., Day, A. P., O'Shea, V., Trager-Cowan, C.

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Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction von Naresh-Kumar, G., Vilalta-Clemente, A., Jussila, H., Winkelmann, A., Nolze, G., Vespucci, S., Nagarajan, S., Wilkinson, A. J., Trager-Cowan, C.

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Diffraction effects and inelastic electron transport in angle‐resolved microscopic imaging applications von WINKELMANN, A., NOLZE, G., VESPUCCI, S., NARESH‐KUMAR, G., TRAGER‐COWAN, C., VILALTA‐CLEMENTE, A., WILKINSON, A.J., VOS, M.

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Nanoscale fissure formation in AlxGa1–xN/GaN heterostructures and their influence on Ohmic contact formation von Smith, M. D., Thomson, D., Zubialevich, V. Z., Li, H., Naresh‐Kumar, G., Trager‐Cowan, C., Parbrook, P. J.

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Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light–electron microscopy von Naresh-Kumar, G., Edwards, P. R., Batten, T., Nouf-Allehiani, M., Vilalta-Clemente, A., Wilkinson, A. J., Le Boulbar, E., Shields, P. A., Starosta, B., Hourahine, B., Martin, R. W., Trager-Cowan, C.

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Determining GaN Nanowire Polarity and its Influence on Light Emission in the Scanning Electron Microscope von Naresh-Kumar, G, Bruckbauer, J, Winkelmann, A, Yu, X, Hourahine, B, Edwards, P. R, Wang, T, Trager-Cowan, C, Martin, R. W

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Polarity Determination in GaN Nanowires by Electron Backscatter Diffraction von Naresh-Kumar, G., Trager-Cowan, C., Winkelmann, A.

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Subgrain structure and dislocations in WC-Co hard metals revealed by electron channelling contrast imaging von Jablon, B.M., Mingard, K., Winkelmann, A., Naresh-Kumar, G., Hourahine, B., Trager-Cowan, C.

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Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon von Zhao, X., Huang, K., Bruckbauer, J., Shen, S., Zhu, C., Fletcher, P., Feng, P., Cai, Y., Bai, J., Trager-Cowan, C., Martin, R. W., Wang, T.

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AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy von Walde, S., Hagedorn, S., Coulon, P.-M., Mogilatenko, A., Netzel, C., Weinrich, J., Susilo, N., Ziffer, E., Matiwe, L., Hartmann, C., Kusch, G., Alasmari, A., Naresh-Kumar, G., Trager-Cowan, C., Wernicke, T., Straubinger, T., Bickermann, M., Martin, R.W., Shields, P.A., Kneissl, M., Weyers, M.

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Electron Channelling Contrast Imaging in a Low Voltage Scanning Electron Microscope von Naresh-Kumar, G., Trager-Cowan, C., Mingard, K. P.

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Imaging Extended Defects in Low Z materials using Electron Channelling Contrast Imaging – New Approaches and Challenges von Naresh-Kumar, G., Alasamari, A., Hourahine, Ben, Trager-Cowan, C.

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Practical application of direct electron detectors to EBSD mapping in 2D and 3D von Mingard, K.P., Stewart, M., Gee, M.G., Vespucci, S., Trager-Cowan, C.

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Structural and optical properties of InGaN/GaN layers close to the critical layer thickness von Pereira, S., Correia, M. R., Pereira, E., Trager-Cowan, C., Sweeney, F., O’Donnell, K. P., Alves, E., Franco, N., Sequeira, A. D.

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Metrology of crystal defects through intensity variations in secondary electrons from the diffraction of primary electrons in a scanning electron microscope von Naresh-Kumar, G., Alasmari, A., Kusch, G., Edwards, P.R., Martin, R.W., Mingard, K.P., Trager-Cowan, C.

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Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors von Naresh-Kumar, G., Vilalta-Clemente, A., Pandey, S., Skuridina, D., Behmenburg, H., Gamarra, P., Patriarche, G., Vickridge, I., di Forte-Poisson, M. A., Vogt, P., Kneissl, M., Morales, M., Ruterana, P., Cavallini, A., Cavalcoli, D., Giesen, C., Heuken, M., Trager-Cowan, C.

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Rapid nondestructive analysis of threading dislocations in wurtzite materials using the scanning electron microscope von Naresh-Kumar, G, Hourahine, B, Edwards, P R, Day, A P, Winkelmann, A, Wilkinson, A J, Parbrook, P J, England, G, Trager-Cowan, C

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Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes von Le Boulbar, E.D., Priesol, J., Nouf-Allehiani, M., Naresh-Kumar, G., Fox, S., Trager-Cowan, C., Šatka, A., Allsopp, D.W.E., Shields, P.A.

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Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope von Trager-Cowan, C, Alasmari, A, Avis, W, Bruckbauer, J, Edwards, P R, Ferenczi, G, Hourahine, B, Kotzai, A, Kraeusel, S, Kusch, G, Martin, R W, McDermott, R, Naresh-Kumar, G, Nouf-Allehiani, M, Pascal, E, Thomson, D, Vespucci, S, Smith, M D, Parbrook, P J, Enslin, J, Mehnke, F, Kuhn, C, Wernicke, T, Kneissl, M, Hagedorn, S, Knauer, A, Walde, S, Weyers, M, Coulon, P-M, Shields, P A, Bai, J, Gong, Y, Jiu, L, Zhang, Y, Smith, R M, Wang, T, Winkelmann, A

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