Structural Transformations During Sb Adsorption on Si(111)–In(4×1) Reconstruction von Bommisetty V. Rao, Bommisetty V. Rao, Dimitry V. Gruznev, Dimitry V. Gruznev, Toyokazu Tambo, Toyokazu Tambo, Chiei Tatsuyama, Chiei Tatsuyama

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STABILITY OF TWO-STEP-GROWTH Bi2Sr2CuOx FILMS ON Si(001) USING SrO BUFFER LAYER von Tambo, T, Shimizu, A, Matsuda, A, Tatsuyama, C

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Adsorption mechanisms of In atoms onto the Si(111)-7× 7; Clustering and substitution for Si atoms von Saito, Mitsufumi, Sasaki, Hirokazu, Mori, Masayuki, Tambo, Toyokazu, Tatsuyama, Chiei

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Effect of In(4×1) Reconstruction Induced Interface Modification on the Growth Behavior of InSb on Si(111) Substrate von Rao, B. V., Gruznev, Dimitri, Tambo, Toyokazu, Tatsuyama, Chiei

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In-situ Annealing of Thin SrO Films Grown on Si(001)-2×1 by Molecular Beam Epitaxy von Tambo, Toyokazu, Shimizu, Atsushi, Matsuda, Akiyoshi, Tatsuyama, Chiei

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Growth of SrTiO 3 films on Si(0 0 1)–Sr(2 × 1) surfaces von Bhuiyan, Md. Nurul Kabir, Kimura, Hiroaki, Tambo, Toyokazu, Tatsuyama, Chiei

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Growth of SrTiO3 films on Si(0 0 1)-Sr(2 × 1) surfaces von NURUL KABIR BHUIYAN, Md, KIMURA, Hiroaki, TAMBO, Toyokazu, TATSUYAMA, Chiei

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In(4×3) Reconstruction Mediated Heteroepitaxial Growth of InSb on Si(001) Substrate von Rao, Bommisetty V., Atoji, Makoto, Li, Don M., Okamoto, Tetsukazu, Tambo, Toyokazu, Tatsuyama, Chiei

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Structural Characterization of Si 0.75 Ge 0.25 Alloy Layers with Sb/Ge-Mediated Low Temperature-grown Si Buffers von Rahman, Mohammad Mizanur, Zhang, Shuqi, Tambo, Toyokazu, Tatsuyama, Chiei

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Growth Temperature Dependence of SrTiO 3 Thin Films by Molecular Beam Epitaxy von Bhuiyan, Md. Nurul Kabir, Kimura, Hiroaki, Tambo, Toyokazu, Tatsuyama, Chiei

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Solid-Phase Epitaxial Growth of SrTiO 3 Thin Films on Si(001) Substrates at Low Temperature von Bhuiyan, Md. Nurul Kabir, Kimura, Hiroaki, Tambo, Toyokazu, Tatsuyama, Chiei

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Molecular Beam Epitaxy of SrTiO 3 Films on Si(100)-2×1 with SrO Buffer Layer von Tatsuyama, Toyokazu Tambo

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XPS study on the change of surface potential of GaSe and InSe induced by Ar+ sputtering von TAMBO, T, TATSUYAMA, C

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Stability of Two-Step-Growth Bi 2 Sr 2 CuO x Films on Si(001) using SrO Buffer Layer von Tambo, Toyokazu, Shimizu, Atsushi, Matsuda, Akiyoshi, Tatsuyama, Chiei

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Short-Period (Si 14 /Ge 1 ) N Superlattice Buffers for Growth of Si 0.75 Ge 0.25 Alloy Layers von Rahman, Mohammad Mizanur, Kurumatani, Kentaro, Matada, Hideaki, Tambo, Toyokazu, Tatsuyama, Chiei

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