Evaluation of the sputtering rate variation in SIMS ultra-shallow depth profiling using multiple short-period delta layers von Homma, Y., Takenaka, H., Toujou, F., Takano, A., Hayashi, S., Shimizu, R.

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Application of SIMS in microelectronics von Tsukamoto, K., Yoshikawa, S., Toujou, F., Morita, H.

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Characterization of lubricants for fluid dynamic bearing by TOF-SIMS von Toujou, F, Tsukamoto, K, Matsuoka, K

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Steady-state surface concentration profiles of primary ion species during secondary ion mass spectrometry measurements von Yoshikawa, S., Morita, H., Toujou, F., Matsunaga, T., Tsukamoto, K.

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Development of FDB spindle motors for HDD use von Matsuoka, K., Obata, S., Kita, H., Toujou, F.

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Round-robin study of arsenic implant dose measurement in silicon by SIMS von Simons, D., Kim, K., Benbalagh, R., Bennett, J., Chew, A., Gehre, D., Hasegawa, T., Hitzman, C., Ko, J., Lindstrom, R., MacDonald, B., Magee, C., Montgomery, N., Peres, P., Ronsheim, P., Yoshikawa, S., Schuhmacher, M., Stockwell, W., Sykes, D., Tomita, M., Toujou, F., Won, J.

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Evaluation of BN-delta-doped multilayer reference materials for shallow depth profiling in SIMS: round-robin test von Toujou, F., Yoshikawa, S., Homma, Y., Takano, A., Takenaka, H., Tomita, M., Li, Z., Hasegawa, T., Sasakawa, K., Schuhmacher, M., Merkulov, A., Kim, H.K., Moon, D.W., Hong, T., Won, J.-Y.

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Control of double diffusion front unintentionally penetrated from a Zn doped InP layer during metalorganic vapor phase epitaxy von Otsuka, N., Kito, M., Ishino, M., Matsui, Y., Toujou, F.

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Lubricant evaluation method for FDBs using TOF-SIMS von MATSUOKA, K, OBATA, S, TOUJOU, F

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Oxygen tracer diffusion in the YBa2Cu3Oy superconductor von Tsukui, S., Adachi, M., Oshima, R., Nakajima, H., Toujou, F., Tsukamoto, K., Tabata, T.

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SIMS round-robin study of depth profiling of arsenic implants in silicon von Tomita, M., Hasegawa, T., Hashimoto, S., Hayashi, S., Homma, Y., Kakehashi, S., Kazama, Y., Koezuka, K., Kuroki, H., Kusama, K., Li, Z., Miwa, S., Miyaki, S., Okamoto, Y., Okuno, K., Saito, S., Sasaki, S., Shichi, H., Shinohara, H., Toujou, F., Ueki, Y., Yamamoto, Y.

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The presence of a SO molecule in [NiFe] hydrogenase from Desulfovibrio vulgaris Miyazaki as detected by mass spectrometry von Higuchi, Yoshiki, Toujou, Fumiyo, Tsukamoto, Kazuyoshi, Yagi, Tatsuhiko

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Morphology of the silicon implanted interface of a polysilicon/single crystal silicon structure von Okuda, S., Ogawa, S., Kouzaki, T., Yoshida, T., Toujou, F., Sinclair, R.

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Evaluation of BN-delta-doped multilayer reference materials for shallow depth profiling in SIMS: round-robin test von TOUJOU, F, YOSHIKAWA, S, MERKULOV, A, KIM, H. K, MOON, D. W, HONG, T, WON, J.-Y, HOMMA, Y, TAKANO, A, TAKENAKA, H, TOMITA, M, LIE, Z, HASEGAWA, T, SASAKAWA, K, SCHUHMACHER, M

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Characterization of lubricants for fluid dynamic bearing by TOF-SIMS von TOUJOU, F, TSUKAMOTO, K, MATSUOKA, K

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Development of multiple As delta layer Si reference thin film for shallow junction secondary ion mass spectrometry profiling von Moon, D. W., Lee, H. I., Kim, H. K., Kim, K. J., Shon, H. K., Won, J. Y., Lee, J. C., Toujou, F.

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Oxygen tracer diffusion in the YBa sub(2)Cu sub(3)O sub(y) superconductor von Tsukui, S, Adachi, M, Oshima, R, Nakajima, H, Toujou, F, Tsukamoto, K, Tabata, T

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Oxygen tracer diffusion in the YBa 2Cu 3O y superconductor von Tsukui, S., Adachi, M., Oshima, R., Nakajima, H., Toujou, F., Tsukamoto, K., Tabata, T.

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Application of SIMS in microelectronics von TSUKAMOTO, K, YOSHIKAWA, S, TOUJOU, F, MORITA, H

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Steady-state surface concentration profiles of primary ion species during secondary ion mass spectrometry measurements von YOSHIKAWA, S, MORITA, H, TOUJOU, F, MATSUNAGA, T, TSUKAMOTO, K

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