Exceptional phonon point versus free phonon coupling in Zn1−xBexTe under pressure: an experimental and ab initio Raman study von Shoker, M. B., Alhaddad, T., Pagès, O., Torres, V. J. B., Postnikov, A. V., Polian, A., Hajj Hussein, R., Pradhan, G. K., Narayana, C., Gardiennet, C., Kervern, G., Nataf, L., Ravy, S., Itié, J.-P., Strzałkowski, K., Marasek, A., Firszt, F.

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Vibrational-mechanical properties of the highly-mismatched Cd1−xBexTe semiconductor alloy: experiment and ab initio calculations von Elmahjoubi, A., Shoker, M. B., Pagès, O., Torres, V. J. B., Polian, A., Postnikov, A. V., Bellin, C., Béneut, K., Gardiennet, C., Kervern, G., En Naciri, A., Broch, L., Hajj Hussein, R., Itié, J.-P., Nataf, L., Ravy, S., Franchetti, P., Diliberto, S., Michel, S., Abouais, A., Strzałkowski, K.

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Raman study of Cd1−xZnxTe phonons and phonon–polaritons—Experiment and ab initio calculations von Alhaddad, T., Shoker, M. B., Pagès, O., Postnikov, A. V., Torres, V. J. B., Polian, A., Le Godec, Y., Itié, J. P., Broch, L., Bouzourâa, M. B., En Naciri, A., Diliberto, S., Michel, S., Franchetti, P., Marasek, A., Strzałkowski, K.

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Taxonomy of high pressure vibration spectra of zincblende semiconductor alloys based on the percolation model von Alhaddad, T., Shoker, M. B., Pagès, O., Polian, A., Torres, V. J. B., Le Godec, Y., Itié, J.-P., Bellin, C., Béneut, K., Diliberto, S., Michel, S., Marasek, A., Strzałkowski, K.

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Multi-phonon (percolation) behavior and local clustering of CdxZn1−xSe-cubic mixed crystals (x ≤ 0.3): A Raman–ab initio study von Shoker, M. B., Pagès, O., Dicko, H., Torres, V. J. B., Postnikov, A. V., Polian, A., Firszt, F., Strzałkowski, K., En Naciri, A., Broch, L., Rao, M. N., Rao, R., Maillard, A., Itié, J.-P.

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Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition von Shoker, M. B., Pagès, Olivier, Torres, V. J. B., Polian, A., Itié, J.-P., Pradhan, G. K., Narayana, C., Rao, M. N., Rao, R., Gardiennet, C., Kervern, G., Strzałkowski, K., Firszt, F.

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Clustering/anticlustering effects on the GeSi Raman spectra at moderate (Ge,Si) contents: Percolation scheme vs. ab initio calculations von Torres, V. J. B., Hajj Hussein, R., Pagès, O., Rayson, M. J.

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Electronic structure and Jahn–Teller instabilities in a single vacancy in Ge von Coutinho, J, Jones, R, Torres, V J B, Barroso, M, Öberg, S, Briddon, P R

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Erratum: “Raman study of Cd1−xZnxTe phonons and phonon-polaritons – Experiment and ab initio calculations” [J. Appl. Phys. 133, 065701 (2023)] von Alhaddad, T., Shoker, M. B., Pagès, O., Postnikov, A. V., Torres, V. J. B., Polian, A., Le Godec, Y., Itié, J.-P., Broch, L., Bouzourâa, M. B., En Naciri, A., Diliberto, S., Michel, S., Franchetti, P., Marasek, A., Strzałkowski, K.

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Re-examination of the SiGe Raman spectra: Percolation/one-dimensional-cluster scheme and ab initio calculations von Pagès, O., Souhabi, J., Torres, V. J. B., Postnikov, A. V., Rustagi, K. C.

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Mössbauer parameters of Fe-related defects in group-IV semiconductors: First principles calculations von Wright, E., Coutinho, J., Öberg, S., Torres, V. J. B.

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Electronic structure of Zn, Cu and Ni impurities in germanium von Silva, E L, Coutinho, J, Carvalho, A, Torres, V J B, Barroso, M, Jones, R, Briddon, P R

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A first-principles model of copper-boron interactions in Si: implications for the light-induced degradation of solar Si von Wright, E, Coutinho, J, Öberg, S, Torres, V J B

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Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions von Santos, P., Coutinho, J., Torres, V. J. B., Rayson, M. J., Briddon, P. R.

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Born effective charges of Cu2ZnSnS4 quaternary compound: First principles calculations von Oliveira, T.A., Coutinho, J., Torres, V.J.B.

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Structure and electronic properties of trivacancy and trivacancy-oxygen complexes in silicon von Markevich, V. P., Peaker, A. R., Hamilton, B., Lastovskii, S. B., Murin, L. I., Coutinho, J., Torres, V. J. B., Dobaczewski, L., Svensson, B. G.

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Electrical activity of chalcogen-hydrogen defects in silicon von Coutinho, J., Torres, V. J. B., Jones, R., Briddon, P. R.

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Oxygen defects in irradiated germanium von CARVALHO, A, JONES, R, TORRES, V. J. B, COUTINHO, J, MARKEVICH, V, OBERG, S, BRIDDON, P. R

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Formation of interstitial carbon–interstitial oxygen complexes in silicon: Local vibrational mode spectroscopy and density functional theory von Khirunenko, L. I., Sosnin, M. G., Pomozov, Yu. V., Murin, L. I., Markevich, V. P., Peaker, A. R., Almeida, L. M., Coutinho, J., Torres, V. J. B.

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Ab-initio modeling of carbon nanotubes functionalized with pyrrolidine von Almeida, L. M., Torres, V. J. B.

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