Methods of AFM for р+-n-Junction GaAs Quality Control von Torkhov, N.A., Nikulnikova, E.V.

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The nature of electrical interaction of Schottky contacts von Torkhov, N. A.

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Nature of forward and reverse saturation currents in metal—semiconductor contacts with the Schottky barrier von Torkhov, N. A.

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Effect of photovoltage on current flow in metal-semiconductor schottky-barrier contacts von Torkhov, N. A.

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the effect of the periphery of metal-semiconductor Schottky-barrier contacts on their electrical characteristics von Torkhov, N. A., Novikov, V. A.

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Investigation into the effect of size of local metallization of N-GaAs surface on the character of surface potential distribution determined by atomic-force microscopy von Nazarchuk, Yu. N., Novikov, V. A., Torkhov, N. A.

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Influence of interface fractal geometry on anomalous behaviour of volt-ampere characteristic of metal-semiconductor contacts with Shottky barrier von Torkhov, N.A.

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Influence of interface fractal geometry on anamalous behaviour of capacity-voltage characteristic of metal-semiconductor contacts with Shottky barrier von Torkhov, N.A.

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Influence of semiconductor surface potential on the efficiency of conducting capacity in Me/n-GaAs contacts with Shottky barrier von Torkhov, N.A., Bozhkov, V.G.

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Investigation of circuit diagram in metal-semiconductor contacts with schottki barrier using the method of atomic force von Bozhkov, V.G., Torkhov, N.A., Novikov, V.A., Ivonin, I.V.

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Fractal geometry of reliefs and surface potentials in epitaxial gallium arsenide and barrier metallization von Torkhov, N.A., Bozhkov, V.G., Novikov, V.A., Ivonin, I.V.

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