Contact resistivity and current flow path at metal/graphene contact von Nagashio, K., Nishimura, T., Kita, K., Toriumi, A.

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Thermal oxidation kinetics of germanium von Wang, X., Nishimura, T., Yajima, T., Toriumi, A.

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Regulating phase transformation kinetics via redox reaction in ferroelectric Ge-doped HfO2 von Yajima, T., Nishimura, T., Migita, S., Tanaka, T., Uchida, K., Toriumi, A.

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Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement von Nagashio, K., Nishimura, T., Toriumi, A.

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Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator von Yamamoto, Y., Kita, K., Kyuno, K., Toriumi, A.

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Carrier density modulation in graphene underneath Ni electrode von Moriyama, T., Nagashio, K., Nishimura, T., Toriumi, A.

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The crystal orientation relation and macroscopic surface roughness in hetero-epitaxial graphene grown on Cu mica von Qi, J L, Nagashio, K, Nishimura, T, Toriumi, A

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Conduction band offset at GeO2/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies von Zhang, W. F., Nishimula, T., Nagashio, K., Kita, K., Toriumi, A.

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Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique von Yajima, T., Oike, G., Yamaguchi, S., Miyoshi, S., Nishimura, T., Toriumi, A.

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Grain yield and phosphorus uptake of rainfed lowland rice under unsubmerged soil stress von Kato, Y., Tajima, R., Toriumi, A., Homma, K., Moritsuka, N., Shiraiwa, T., Yamagishi, J., Mekwatanakern, P., Chamarerk, V., Jongdee, B.

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On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration von Takagi, S., Toriumi, A., Iwase, M., Tango, H.

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Programmable single-electron transistor logic for future low-power intelligent LSI: proposal and room-temperature operation von Uchida, K., Koga, J., Ohba, R., Toriumi, A.

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Coordination and interface analysis of atomic-layer-deposition Al2O3 on Si(001) using energy-loss near-edge structures von Kimoto, K., Matsui, Y., Nabatame, T., Yasuda, T., Mizoguchi, T., Tanaka, I., Toriumi, A.

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Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology von Mizuno, T., Takagi, S., Sugiyama, N., Satake, H., Kurobe, A., Toriumi, A.

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Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's von Mizuno, T., Okumtura, J., Toriumi, A.

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Reflection confocal microscope readout system for three-dimensional photochromic optical data storage von Toriumi, A, Kawata, S, Gu, M

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Nonvolatile Si quantum memory with self-aligned doubly-stacked dots von Ohba, R., Sugiyama, N., Uchida, K., Koga, J., Toriumi, A.

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Electrical transport properties of graphene on SiO2 with specific surface structures von Nagashio, K., Yamashita, T., Nishimura, T., Kita, K., Toriumi, A.

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Evolution of leakage paths in HfO2∕SiO2 stacked gate dielectrics: A stable direct observation by ultrahigh vacuum conducting atomic force microscopy von Kyuno, K., Kita, K., Toriumi, A.

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Experimental evidence of inelastic tunneling in stress-induced leakage current von Takagi, S., Yasuda, N., Toriumi, A.

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