An investigation of epitaxial films by means of high energy electron diffraction von Poludin, V.I., Svechnikov, S.V., Torchun, N.M., Tkhorik, Yu.A., Shvarts, Yu.A.

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The structure and electrical characteristics of Si/Ge heterojunctions von Vasilevskaya, V.N., Konakova, R.V., Osadchaya, N.V., Tkhorik, Yu.A., Torchun, N.M., Shvarts, Yu.M.

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The structure and electrical characteristics of Si/Ge heterojunctions: I: Imperfections in the Si-Ge heteroepitaxial system obtained by deposition of germanium from a molecular bea... von Vasilevskaya, V.N., Konakova, R.V., Osadchaya, N.V., Tkhorik, Yu.A., Torchun, N.M., Shvarts, Yu.M.

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An investigation of epitaxial films by means of high energy electron diffraction: II. A study of film morphology von Poludin, V.I., Svechnikov, S.V., Torchun, N.M., Tkhorik, Yu.A., Shvarts, Yu.A.

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An investigation of epitaxial films by means of reflection high energy electron diffraction part I. Obtaining and interpretation of diffraction patterns von Klimenko, A.P., Poludin, V.I., Svechnikov, S.V., Torchun, N.M., Tkhorik, Yu.A.

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