Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach von Ding, Y., Fan, W. J., Xu, D. W., Tong, C. Z., Liu, Y., Zhao, L. J.

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Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers von Zhao, HX, Yoon, SF, Tong, CZ, Liu, CY, Wang, R, Cao, Q

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Effects of Thermal Annealing on the Dynamic Characteristics of InAs/GaAs Quantum Dot Lasers von Zhao, H X, Yoon, S F, Ngo, C Y, Wang, R, Tong, C Z, Liu, C Y, Cao, Q

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Investigation of the fabrication mechanism of self-assembled GaAs quantum rings grown by droplet epitaxy von Tong, C Z, Yoon, S F

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Electrical resistivity in Zr48Nb8Cu12Fe8Be24 glassy and crystallized alloys von Bai, H. Y., Tong, C. Z., Zheng, P.

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Investigating ego modules and pathways in osteosarcoma by integrating the EgoNet algorithm and pathway analysis von Chen, X Y, Chen, Y H, Zhang, L J, Wang, Y, Tong, Z C

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Rate Equations for 1.3- \mu m Dots-Under-a-Well and Dots-in-a-Well Self-Assembled InAs-GaAs Quantum-Dot Lasers von Tong, C.Z., Yoon, S.F., Ngo, C.Y., Liu, C.Y., Loke, W.K.

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Self-Consistent Analysis of Carrier Confinement and Output Power in 1.3-μm InAs-GaAs Quantum-Dot VCSELs von XU, D. W, SOON FATT YOON, TONG, C. Z

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1.3- \mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process von Xu, D W, Yoon, S F, Ding, Y, Tong, C Z, Fan, W J, Zhao, L J

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Rate equation model of the negative characteristic temperature of InAs∕GaAs quantum dot lasers von Tong, C. Z., Yoon, S. F., Liu, C. Y.

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Comparative analysis of cavity length-dependent temperature sensitivity of GaInNAs quantum dot lasers and quantum well lasers von Liu, C Y, Yoon, S F, Cao, Q, Tong, C Z, Sun, Z Z

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Self-Consistent Analysis of Carrier Confinement and Output Power in 1.3-[Formula Omitted] InAs-GaAs Quantum-Dot VCSELs von Xu, D W, Yoon, S F, Tong, C Z

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Fabrication and modulation characteristics of 1.3 μm p-doped InAs quantum dot vertical cavity surface emitting lasers von DING, Y, FAN, W. J, XU, D. W, TONG, C. Z, YOON, S. F, ZHANG, D. H, ZHAO, L. J, WANG, W, LIU, Y, ZHU, N. H

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An investigation of growth temperature on the surface morphology and optical properties of 1.3 µm InAs/InGaAs/GaAs quantum dot structures von Ngo, C Y, Yoon, S F, Tong, C Z, Loke, W K, Chua, S J

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1.55 μ m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs von Han, Q., Yang, X. H., Niu, Z. C., Ni, H. Q., Xu, Y. Q., Zhang, S. Y., Du, Y., Peng, L. H., Zhao, H., Tong, C. Z., Wu, R. H., Wang, Q. M.

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Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers von Cao, Q., Yoon, S. F., Tong, C. Z., Ngo, C. Y., Liu, C. Y., Wang, R., Zhao, H. X.

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Low transparency current density and high temperature operation from ten-layer p-doped 1.3μm InAs∕InGaAs∕GaAs quantum dot lasers von Liu, C. Y., Yoon, S. F., Cao, Q., Tong, C. Z., Li, H. F.

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Effects of rapid thermal annealing on optical properties of p -doped and undoped InAs/InGaAs dots-in-a-well structures von Cao, Q., Yoon, S. F., Liu, C. Y., Tong, C. Z.

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Theoretical investigation of 1.3   μ m dots-under-a-well and dots-in-a-well InAs/GaAs quantum dot vertical-cavity surface-emitting lasers von Tong, C. Z., Xu, D. W., Yoon, S. F.

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Low energy Ar + sputtering-induced GaAs quantum dot formation and evolution von Wang, Y., Yoon, S. F., Ngo, C. Y., Tong, C. Z., Liu, C. Y.

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