Selective Area Epitaxial Growth of Stretchable Geometry AlGaN-GaN Heterostructures von Mahaboob, Isra, Marini, Jonathan, Hogan, Kasey, Rocco, Emma, Tompkins, Randy P., Lazarus, Nathan, Shahedipour-Sandvik, Fatemeh

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The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes von Tompkins, Randy P., Walsh, Timothy A., Derenge, Michael A., Kirchner, Kevin W., Zhou, Shuai, Nguyen, Cuong B., Jones, Kenneth A., Suvarna, Puneet, Tungare, Mihir, Tripathi, Neeraj, Shahedipour-Sandvik, Fatemeh (Shadi)

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Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements von Swartz, Craig H, Tompkins, Randy P, Giles, Nancy C, Myers, Thomas H, Lu, Hai, Schaff, William J, Eastman, Lester F

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HVPE GaN for high power electronic Schottky diodes von Tompkins, Randy P., Walsh, Timothy A., Derenge, Michael A., Kirchner, Kevin W., Zhou, Shuai, Nguyen, Cuong B., Jones, Kenneth A., Mulholland, Gregory, Metzger, Robert, Leach, Jacob H., Suvarna, Puneet, Tungare, Mihir, Shahedipour-Sandvik, Fatemeh (Shadi)

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Influence of mask material on the electrical properties of selective area epitaxy GaN microstructures von Mahaboob, Isra, Hogan, Kasey, Novak, Steven W., Shahedipour-Sandvik, Fatemeh, Tompkins, Randy P., Lazarus, Nathan

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Design and characterization of GaN p-i-n diodes for betavoltaic devices von Khan, Muhammad R., Smith, Joshua R., Tompkins, Randy P., Kelley, Stephen, Litz, Marc, Russo, John, Leathersich, Jeff, Shahedipour-Sandvik, Fatemeh (Shadi), Jones, Kenneth A., Iliadis, Agis

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ISDRS 2016 special issue foreword von Iliadis, Agis A., Akturk, Akin, Tompkins, Randy P.

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Mechanical Analysis of Stretchable AlGaN/GaN High Electron Mobility Transistors von Tompkins, Randy P., Mahaboob, Isra, Shahedipour-Sandvik, Shadi, Lazarus, Nathan

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Structural Anisotropy in Stretchable Silicon von Curtis, Sabrina M., Tompkins, Randy P., Nichols, Barbara M., Graziano, Milena B., Kierzewski, Iain, Smith, Gabriel, Leite, Marina S., Lazarus, Nathan

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Achieving Low Doped (<10 16 ) GaN with Large Breakdown Voltages (~1000 V) von Tompkins, Randy P., Smith, J. R., Derenge, Michael A., Kirchner, Kevin W., Zhou, Shuai, Jones, Kenneth A., Metzger, R., Leach, Jacob, Suvana, Puneet, Tungare, Mihir, Shahedipou-Sandvik, Fatemeh

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GaN Power Schottky Diodes von Tompkins, Randy P., Smith, Joshua R., Zhou, Shuai, Kirchner, Kevin W., Derenge, Michael A., Jones, Kenneth A., Leach, Jacob H., Mulholland, Greg, Udwary, Kevin, Preble, Edward, Suvarna, Puneet, Tungare, Mihir, Shahedipour-Sandvik, F.

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Polarity Inverted GaN for Photonic Crystal Biosensor Applications von Tompkins, Randy P., Dawson, Jeremy, Hornak, Lawrence, Myers, Thomas

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Mechanical Analysis of Stretchable AlGaN/GaN High Electron Mobility Transistors von Tompkins, Randy P., Mahaboob, Isra, Shahedipour-Sandvik, Shadi, Lazarus, Nathan

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Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers von Tompkins, Randy P, Nguyen, Danh

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Python Scripts for Automation of Current-Voltage Testing of Semiconductor Devices (FY17) von Zhao, Bryan H, Tompkins,Randy P

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Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016 von Zhao,Bryan H, Derenge,Michael A, Graziano,Milena B, Tompkins,Randy P

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Polarization enhanced tunnel junctions in tandem solar cells von Zhou, Shuai, Tompkins, Randy P., Jones, Kenneth A., Gallinat, Chad, Rotella, Paul, Moe, Craig, Wraback, Michael

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Achieving Low Doped (<10 16 ) GaN with Large Breakdown Voltages (~1000 V) von Jones, Kenneth A., Tompkins, Randy P., Derenge, Michael A., Kirchner, Kevin W., Zhou, Shuai, Metzger, R., Leach, Jacob, Suvana, Puneet, Tungare, Mihir, Shahedipou-Sandvik, Fatemeh

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GaN Power Schottky Diodes von Tompkins, Randy P., Smith, Joshua R., Zhou, Shuai, Kirchner, Kevin W., Derenge, Michael A., Jones, Kenneth A., Mulholland, Greg, Suvarna, Puneet, Tungare, Mihir, Shahedipour-Sandvik, Shadi

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Gallium Nitride (GaN) High Power Electronics (FY11) von Jones, Kenneth A, Tompkins, Randy P, Derenge, Michael A, Kirchner, Kevin W, Batyrev, Iskander G, Zhou, Shuai

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