Direct observation of electron emission site on boron-doped polycrystalline diamond thin films using an ultra-high-vacuum scanning tunneling microscope von Kim, Y. D., Choi, W., Wakimoto, H., Usami, S., Tomokage, H., Ando, T.

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Surface resistance and field emission current measurements on chemically vapour deposited polycrystalline diamond measured by scanning probe methods von Iseri, Y, Honda, M, Kim, Y-D, Ando, T, Choi, W, Tomokage, H

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Scanning probe field emission current measurements on diamond-like carbon films treated by reactive ion etching von Kawasaki, D, Tsuchimura, D, Choi, W, Iseri, Y, Ando, T, Tomokage, H

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Device Simulation for Evaluating Effects of Inplane Biaxial Mechanical Stress on n-Type Silicon Semiconductor Devices von Koganemaru, M., Yoshida, K., Ikeda, T., Miyazaki, N., Tomokage, H.

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Characterization of boron doped polycrystalline CVD diamond by ultra high vacuum scanning tunneling microscopy von Kim, Y.D, Choi, W, Wakimoto, H, Usami, S, Tomokage, H, Ando, T

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Coating of pulp fiber with xonotlite under hydrothermal conditions von TAKAHASHI, K, YAMASAKI, N, MISHIMA, K, MATSUYAMA, K, TOMOKAGE, H

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Spatial variation of field emission current on nitrogen-doped diamond-like carbon surfaces by scanning probe method von Choi, W., Kim, Y.D., Iseri, Y., Nomura, N., Tomokage, H.

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Controlling Process of P Diffusion in Si Based on the Pair Diffusion Model von Morooka, Masami, Yoshida, Masayuki, Tomokage, H., Takahashi, M.

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22aAJ-7 Pd intercalation under the graphene sheets grown on the SiC(0001) surface von Yagyu, K., Takahashi, K., Tochihara, H., Tomokage, H., Suzuki, T.

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Scanning Probe Field Emission Current Measurements on Polycrystalline Diamond Films von Iseri, Y., Kim, Young Do, Wakimoto, H., Tomokage, H., Choi, W., Ando, T.

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The field emission properties of silicon carbide whiskers grown by CVD von Lim, Dong Chan, Ahn, Hyung Suk, Choi, Doo Jin, Wang, Chae Hyun, Tomokage, Hajime

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19aEC-3 Copper evaporation on graphene sheets grown on SiC(0001) von Yagyu, K., Tomokage, H., Suzuki, T.

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26pPSB-30 Copper evaporated graphene sheets on SiC(0001) surfaces von Yagyu, K., Tomokage, H., Suzuki, T.

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Defect Characterization in Metal-Oxide-Semiconductor Field-Effect-Transistors with Trench Gates by Electron Beam-Induced Current Technique von Ishiwata, Y., Kawakami, Masahiro, Tomokage, H., Souno, H., Sonoda, N.

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Method of determining capture cross section including a slow capture of carriers in the depletion edge region von TOMOKAGE, H, MIYAMOTO, T, OKUSHI, H, TOKUMARU, Y

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26pPSA-28 Copper evaporation on graphene sheets grown on SiC(0001)2 von Yagyu, K., Tomokage, H., Suzuki, T., Tajiri, T., Kohno, A.

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28aAQ-2 Fabrication of a single layer graphene by copper intercalation on a SiC(0001) surface von Yagyu, K., Tajiri, T., Kohno, A., Takahashi, K., Tochihara, H., Tomokage, H., Suzuki, T.

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Electron-beam-induced currents on beryllium-doped cubic boron nitride single crystal von Tomokage, Hajime, Nomura, Naoki, Taniguchi, Takashi, Ando, Toshihiro

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Solubilities of Undecanolide and Pentadecanolactone in Supercritical Carbon Dioxide von Mishima, Kenji, Matsuyama, Kiyoshi, Baba, Masayoshi, Hirabaru, Takuji, Yamauchi, Satoru, Tomokage, Hajime, Takahashi, Keiji, Yamasaki, Nakamichi

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Effective Diffusion Coefficient and Controlling Process of P Diffusion in Si Based on the Pair Diffusion Models of Vacancy and Interstitial Mechanisms von Masayuki Yoshida, Masayuki Yoshida, Masami Morooka, Masami Morooka, Manabu Takahashi, Manabu Takahashi, Hajime Tomokage, Hajime Tomokage

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