Effect of uniaxial stress on electroluminescence, valence band modification, optical gain, and polarization modes in tensile strained p -AlGaAs/GaAsP/ n -AlGaAs laser diode structu... von Bogdanov, E. V., Minina, N. Ya, Tomm, J. W., Kissel, H.

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Evidence for "dark charge" from photoluminescence measurements in wide InGaN quantum wells von Bercha, A, Trzeciakowski, W, Muziol, G, Tomm, J W, Suski, T

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Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers von Tomm, J.W., Ziegler, M., Hempel, M., Elsaesser, T.

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Robust Si/Ge heterostructure metasurfaces as building blocks for wavelength-selective photodetectors von Schlipf, J., Berkmann, F., Yamamoto, Y., Reichenbach, M., Veleski, M., Kawaguchi, Y., Mörz, F., Tomm, J. W., Weißhaupt, D., Fischer, I. A.

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Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: up to the solubility limit and beyond von Talalaev, V G, Tomm, J W, Kukushkin, S A, Osipov, A V, Shtrom, I V, Kotlyar, K P, Mahler, F, Schilling, J, Reznik, R R, Cirlin, G E

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Interdot carrier transfer in asymmetric bilayer InAs ∕ GaAs quantum dot structures von Mazur, Yu I., Wang, Zh M., Tarasov, G. G., Xiao, Min, Salamo, G. J., Tomm, J. W., Talalaev, V., Kissel, H.

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Role of hole confinement in the recombination properties of InGaN quantum structures von Anikeeva, M., Albrecht, M., Mahler, F., Tomm, J. W., Lymperakis, L., Chèze, C., Calarco, R., Neugebauer, J., Schulz, T.

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Temperature dependent carrier escape from quantum well states in GaAs/GaAlAs graded index laser structures von Herrmann, K H, Tomm, J W, Al-Otaibi, Hessa

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Thermal properties of high power laser bars investigated by spatially resolved thermoreflectance spectroscopy von Pierścińska, D., Pierściński, K., Bugajski, M., Tomm, J. W.

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Emission Kinetics of Surface (Bi)Excitons in ZnO Thin Films von Akopyan, I. Kh, Labzovskaya, M. E., Novikov, B. V., Talalaev, V. G., Tomm, J. W., Schilling, J.

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GaAs/GaP quantum dots: Ensemble of direct and indirect heterostructures with room temperature optical emission von Dadgostar, S., Schmidtbauer, J., Boeck, T., Torres, A., Martínez, O., Jiménez, J., Tomm, J. W., Mogilatenko, A., Masselink, W. T., Hatami, F.

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Spatially resolved spectroscopic strain measurements on high-power laser diode bars von Tomm, J. W., Gerhardt, A., Müller, R., Malyarchuk, V., Sainte-Marie, Y., Galtier, P., Nagle, J., Landesman, J.-P.

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Nonresonant tunneling carrier transfer in bilayer asymmetric InAs/GaAs quantum dots von MAZUR, Yu. I, WANG, Zh. M, TARASOV, G. G, SALAMO, G. J, TOMM, J. W, TALALAEV, V, KISSEL, H

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Carrier transfer in self-assembled coupled InAs/GaAs quantum dots von Tarasov, G. G., Mazur, Yu. I., Zhuchenko, Z. Ya, Maaßdorf, A., Nickel, D., Tomm, J. W., Kissel, H., Walther, C., Masselink, W. T.

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Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots von Mazur, Yu. I., Tomm, J. W., Petrov, V., Tarasov, G. G., Kissel, H., Walther, C., Zhuchenko, Z. Ya, Masselink, W. T.

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Photoelectric dichroism of oriented thin film CdS fabricated by pulsed-laser deposition von Ullrich, B, Tomm, J.W, Dushkina, N.M, Tomm, Y, Sakai, H, Segawa, Y

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Facet degradation of high-power diode laser arrays von TOMM, J. W, THAMM, E, BÄRWOLFF, A, ELSAESSER, T, LUFT, J, BAEUMLER, M, MUELLER, S, JANTZ, W, RECHENBERG, I, ERBERT, G

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Emulation of the operation and degradation of high-power laser bars using simulation tools von Bull, S, Lim, J J, Amuzuvi, C K, Tomm, J W, Nagle, J, Sumpf, B, Erbert, G, Michel, N, Krakowski, M, Larkins, E C

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Optical and photoelectrical properties of oriented ZnO films von Tomm, J. W., Ullrich, B., Qiu, X. G., Segawa, Y., Ohtomo, A., Kawasaki, M., Koinuma, H.

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Transient carrier transfer in tunnel injection structures von Talalaev, V. G., Tomm, J. W., Zakharov, N. D., Werner, P., Gösele, U., Novikov, B. V., Sokolov, A. S., Samsonenko, Y. B., Egorov, V. A., Cirlin, G. E.

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