Direct observation and three dimensional structural analysis for threading mixed dislocation inducing current leakage in 4H-SiC IGBT von Konishi, Kazuya, Nakamura, Yu, Nagae, Akemi, Kawabata, Naoyuki, Tanaka, Takanori, Tomita, Nobuyuki, Watanabe, Hiroshi, Tomohisa, Shingo, Miura, Naruhisa

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Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode von Yamakawa, Satoshi, Tomita, Nobuyuki, Yamamoto, Shigehisa, Nakata, Shuhei, Nakao, Yukiyasu

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Large four-wave mixing of spatially extended excitonic states in thin GaAs layers von Ishihara, Hajime, Cho, Kikuo, Akiyama, Koichi, Tomita, Nobuyuki, Nomura, Yoshinori, Isu, Toshiro

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Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method von Sumitani, Hiroaki, Tanaka, Takanori, Tomita, Nobuyuki, Tarutani, Masayoshi, Ohno, Akihito, Toyoda, Yoshihiko, Hamano, Kenichi, Yamakawa, Satoshi, Mitani, Yoichiro, Kuroiwa, Takeharu, Imaizumi, Masayuki

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Stacking fault expansion from basal plane dislocations converted into threading edge dislocations in 4H-SiC epilayers under high current stress von Konishi, Kazuya, Yamamoto, Shigehisa, Nakata, Shuhei, Nakamura, Yu, Nakanishi, Yosuke, Tanaka, Takanori, Mitani, Yoichiro, Tomita, Nobuyuki, Toyoda, Yoshihiko, Yamakawa, Satoshi

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Observation of a large third-order nonlinear response of exciton polaritons in GaAs thin film von Akiyama, Koich, Tomita, Nobuyuki, Nomura, Yoshinori, Isu, Toshiro

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Sequence-directed nucleosome-depletion is sufficient to activate transcription from a yeast core promoter in vivo von Ichikawa, Yuichi, Morohashi, Nobuyuki, Tomita, Nobuyuki, Mitchell, Aaron P., Kurumizaka, Hitoshi, Shimizu, Mitsuhiro

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Low Resistivity SiC Devices with a Drift Layer Optimized by Variational Approach von Kawabata, Naoyuki, Watanabe, Hiroshi, Tanaka, Takanori, Tomita, Nobuyuki, Miura, Naruhisa, Yamakawa, Satoshi, Tominaga, Takaaki, Koyama, Akihiro, Kuroiwa, Takeharu

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Cyclic Voltammetric Characteristics of Tri- and Diarylcarbenium Salts Having Some Methoxyphenyl Groups von Erabi, Tatsuo, Ohtsuki, Takayuki, Osaki, Eiko, Tomita, Nobuyuki, Asahara, Masahiro, Wada, Masanori

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Ultrafast optical response of excitons weakly confined in semiconductors von Akiyama, Koichi, Tomita, Nobuyuki, Nishimura, Tetsuya, Nomura, Yoshinori, Isu, Toshiro, Ishihara, Hajime, Cho, Kikuo

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Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy von Imaizumi, Masayuki, Toyoda, Yoshihiko, Tanaka, Takanori, Mitani, Yoichiro, Sumitani, Hiroaki, Tomita, Nobuyuki, Kuroiwa, Takeharu, Yamakawa, Satoshi, Sakai, Masashi, Tarutani, Masayoshi, Kawabata, Naoyuki

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Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density von Sumitani, Hiroaki, Kuroiwa, Takeharu, Tanaka, Takanori, Tomita, Nobuyuki, Tarutani, Masayoshi, Toyoda, Yoshihiko, Yamakawa, Satoshi, Mitani, Yoichiro, Imaizumi, Masayuki, Kawabata, Naoyuki

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Influence of Growth Pressure and Addition of HCI Gas on Growth Rate of 4H-SiC Epitaxy von Tanaka, Takanori, Kawabata, Naoyuki, Mitani, Yoichiro, Sakai, Masashi, Tomita, Nobuyuki, Tarutani, Masayoshi, Kuroiwa, Takeharu, Toyoda, Yoshihiko, Imaizumi, Masayuki, Sumitani, Hiroaki, Yamakawa, Satoshi

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Characteristics of a Schottky Barrier Diode and the SiC Wafers Sliced by Wire Electrical Discharge Machining von Sumitani, Hiroaki, Itokazu, Atsushi, Miyake, Hidetaka, Tomita, Nobuyuki, Furusho, Tomoaki, Toyoda, Yoshihiko, Hashimoto, Takashi, Yamakawa, Satoshi, Kuroiwa, Takeharu, Nakaki, Yoshiyuki, Sato, Tatsushi

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Investigation of optical properties of InGaN multiple quantum wells on free-standing GaN substrates grown by metalorganic vapor phase epitaxy von Ohno, Akihito, Tomita, Nobuyuki, Yamada, Tomoo, Okagawa, Hiroaki, Takemi, Masayoshi

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Hands-on education system using water rocket von Tomita, Nobuyuki, Watanabe, Rikio, Nebylov, Alexander V.

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Tip-off Angular Velocity of Small Rocket under Influence of Launcher Rail Oscillation von Tomita, Nobuyuki

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Preliminary Study of the Extensive Use of Take-Off Assists for Launching a Space Plane von TOMITA, Nobuyuki, OHKAMI, Yoshiaki

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Low Resistivity SiC-SBD with Optimized Doping Profile of Drift Layer von Tominaga, Takaaki, Koyama, Akihiro, Tanaka, Takanori, Watanabe, Hiroshi, Tomita, Nobuyuki, Yamakawa, Satoshi

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Establishment of Ohmic Contact Formation by Laser Annealing von Tominaga, Takaaki, Okabe, Hiroaki, Nakanishi, Yosuke, Sugahara, Kazuyuki, Tomita, Nobuyuki, Yamakawa, Satoshi

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