Crying Wulff on vapor–solid distributions of crystallogen chemical vapor deposition via p-block element hydride thermal decomposition von TOMASINI, Pierre

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Thermodynamic Theory of Silicon Chemical Vapor Deposition von Tomasini, Pierre

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Thermodynamics of germanium chemical vapor deposition via germane and digermane von Tomasini, Pierre

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Vapor – Solid distribution of silicon germanium chemical vapor deposition determined with classical thermodynamics von Tomasini, Pierre

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Chemical Vapor Deposition of Elemental Crystallogen Thin Films von Tomasini, Pierre

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Mapping vapor – solid distributions of silicon germanium chemical vapor depositions von Tomasini, Pierre

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A simplified model for the vapor – Solid distribution of Silicon Germanium Chemical Vapor Deposition von Tomasini, Pierre

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Deconstructing Phase Diagram Calculations von Tomasini, Pierre

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Epitaxy of Si:C on Si(001) via methyldichlorosilane von Tomasini, Pierre

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Monochlorosilane for Low Temperature Silicon Epitaxy von Tomasini, Pierre, Weeks, Keith D.

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GRADED SUPERLATTICE STRUCTURE FOR GATE ALL AROUND DEVICES von DUBE, Abhishek, TOMASINI, Pierre, HUANG, Yi-Chiau

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GRADED SUPERLATTICE STRUCTURE FOR GATE ALL AROUND DEVICES von Dube, Abhishek, TOMASINI, Pierre, HUANG, Yi-Chiau

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(Invited) Are Si/SiGe Tunneling Field-Effect Transistors a Good Idea? von Koester, Steve, Lauer, Isaac, Majumdar, Amlan, Cai, Jim, Sleight, Jeffrey, Bedell, Stephen, Solomon, Paul, Laux, Steve, Chang, Leland, Koswatta, Siyu, Haensch, Wilfried, Tomasini, Pierre, Thomas, Shawn

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Influence of the strain-relaxation induced defect creation on the leakage current of embedded Si1-xGex source/drain junctions von Gonzalez, Mireia Bargallo, Simoen, Eddy, Vissouvanadin, Bertrand, Eneman, Geert, Verheyen, Peter, Loo, Roger, Claeys, Cor, MacHkaoutsan, Vladimir, Tomasini, Pierre, Thomas, Shawn

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Influence of the strain‐relaxation induced defect creation on the leakage current of embedded Si 1– x Ge x source/drain junctions von Gonzalez, Mireia Bargallo, Simoen, Eddy, Vissouvanadin, Bertrand, Eneman, Geert, Verheyen, Peter, Loo, Roger, Claeys, Cor, Machkaoutsan, Vladimir, Tomasini, Pierre, Thomas, Shawn

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Influence of the strain-relaxation induced defect creation on the leakage current of embedded Si1-x Gex source/drain junctions von Gonzalez, Mireia Bargallo, Simoen, Eddy, Vissouvanadin, Bertrand, Eneman, Geert, Verheyen, Peter, Loo, Roger, Claeys, Cor, Machkaoutsan, Vladimir, Tomasini, Pierre, Thomas, Shawn

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Semiconductor structures including stacks of indium gallium nitride layers von TOMASINI PIERRE, FIGUET CHRISTOPHE

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Graded superlattice structure for gate all around devices von HUANG, YIIAU, TOMASINI, PIERRE, DUBE, ABHISHEK

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PROCÉDÉS DE FORMATION DE MATÉRIAUX SEMI-CONDUCTEURS III/IV ET STRUCTURES SEMI-CONDUCTRICES FORMÉES EN UTILISANT CES PROCÉDÉS von FIGUET, CHRISTOPHE, TOMASINI, PIERRE

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Methods of forming III/V semiconductor materials, and semiconductor structures formed using such methods von TOMASINI PIERRE, FIGUET CHRISTOPHE

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