Electrical endurance of Co/Ni wire for magnetic domain wall motion device von Fukami, S., Yamanouchi, M., Honjo, H., Kinoshita, K., Tokutome, K., Miura, S., Ikeda, S., Kasai, N., Ohno, H.

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Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer von Honjo, H., Fukami, S., Ishihara, K., Nebashi, R., Kinoshita, K., Tokutome, K., Murahata, M., Miura, S., Sakimura, N., Sugibayashi, T., Kasai, N., Ohno, H.

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Continuous-wave operation of 1.30 mu m GaAsSb/GaAs VCSELs von Anan, T, Yamada, M, Nishi, K, Kurihara, K, Tokutome, K, Kamei, A, Sugou, S

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1.1-μm-range InGaAs VCSELs for high-speed optical interconnections von Suzuki, N., Hatakeyama, H., Tokutome, K., Fukatsu, K., Yamada, M., Anan, T., Tsuji, M.

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Low-threshold operation of 1.34-μm GaInNAs VCSEL grown by MOVPE von Yamada, M., Anan, T., Hatakeyama, H., Tokutome, K., Suzuki, N., Nakamura, T., Nishi, K.

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25 Gbit/s 100°C operation of highly reliable InGaAs/GaAsP-VCSELs von HATAKEYAMA, H, AKAGAWA, T, FUKATSU, K, SUZUKI, N, TOKUTOME, K, YASHIKI, K, ANAN, T, TSUJI, M

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Room temperature low-threshold CW operation of 1.23 mu m GaAsSb VCSELs on GaAs substrates von Yamada, M, Anan, T, Kurihara, K, Nishi, K, Tokutome, K, Kamei, A, Sugou, S

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Low-threshold operation of 1.3-μm GaAsSb quantum-well lasers directly grown on GaAs substrates von Yamada, M., Anan, T., Tokutome, K., Kamei, A., Nishi, K., Sugou, S.

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Highly Reliable High-Speed 1.1-$\mu$m-Range VCSELs With InGaAs/GaAsP-MQWs von Hatakeyama, H., Anan, T., Akagawa, T., Fukatsu, K., Suzuki, N., Tokutome, K., Tsuji, M.

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Low-threshold operation of 1.34-[mu]m GaInNAs VCSEL grown by MOVPE von M. Yamada, M. Yamada, T. Anan, T. Anan, H. Hatakeyama, H. Hatakeyama, K. Tokutome, K. Tokutome, N. Suzuki, N. Suzuki, T. Nakamura, T. Nakamura, K. Nishi, K. Nishi

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1.1-/spl mu/m-range InGaAs VCSELs for high-speed optical interconnections von Suzuki, N, Hatakeyama, H, Tokutome, K, Fukatsu, K, Yamada, M, Anan, T, Tsuji, M

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High-temperature characteristics of 1.3-μm InAsP-InAlGaAs ridge waveguide lasers von Yamada, M., Anan, T., Tokutome, K., Sugou, S.

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Low-threshold operation of 1.34-/spl mu/m GaInNAs VCSEL grown by MOVPE von Yamada, M., Anan, T., Hatakeyama, H., Tokutome, K., Suzuki, N., Nakamura, T., Nishi, K.

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Low-threshold operation of 1.3-/spl mu/m GaAsSb quantum-well lasers directly grown on GaAs substrates von Yamada, M., Anan, T., Tokutome, K., Kamei, A., Nishi, K., Sugou, S.

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High-speed VCSELs von Suzuki, N., Hatakeyama, H., Yashiki, K., Fukatsu, K., Tokutome, K., Akagawa, T., Anan, T., Tsuji, M.

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Highly Reliable High-Speed 1.1- \mum-Range VCSELs With InGaAs/GaAsP-MQWs von Hatakeyama, H., Anan, T., Akagawa, T., Fukatsu, K., Suzuki, N., Tokutome, K., Tsuji, M.

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25 Gbit/s 100 degree C operation of highly reliable InGaAs/GaAsP-VCSELs von Hatakeyama, H, Akagawa, T, Fukatsu, K, Suzuki, N, Tokutome, K, Yashiki, K, Anan, T, Tsuji, M

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25 Gbit/s 100°C operation of highly reliable InGaAs/GaAsP-VCSELs von Hatakeyama, H, Akagawa, T, Fukatsu, K, Suzuki, N, Tokutome, K, Yashiki, K, Anan, T, Tsuji, M

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High-speed 1.1-μm-range InGaAs VCSELs von Anan, T, Suzuki, N, Yashiki, K, Fukatsu, K, Hatakeyama, H, Akagawa, T, Tokutome, K, Tsuji, M

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Low-threshold operation of 1.34-mum GaInNAs VCSEL grown by MOVPE von Yamada, M, Anan, T, Hatakeyama, H, Tokutome, K, Suzuki, N, Nakamura, T, Nishi, K

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