Charge conduction mechanisms of atomic-layer-deposited Er2O3 thin films von Jinesh, K. B., Lamy, Y., Tois, E., Besling, W. F. A.

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Formation and characterization of nanometer scale metal-oxide-semiconductor structures on GaAs using low-temperature atomic layer deposition von Ye, P. D., Wilk, G. D., Tois, E. E., Wang, Jian Jim

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The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications von Toomey, B., Cherkaoui, K., Monaghan, S., Djara, V., O’Connor, É., O’Connell, D., Oberbeck, L., Tois, E., Blomberg, T., Newcomb, S.B., Hurley, P.K.

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Atomic layer deposition of hafnium and zirconium silicate thin films von VAINONEN-AHLGREN, E, TOIS, E, AHLGREN, T, KHRIACHTCHEV, L, MARLES, J, HAUKKA, S, TUOMINENA, M

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HfSiO4 dielectric layers deposited by ALD using HfCl4 and NH2(CH2)3Si(OC2H5)3 precursors von RITTERSMA, Z. M, ROOZEBOOM, F, VERHEIJEN, M. A, VAN BERKUM, J. G. M, DAO, T, SNIJDERS, J. H. M, VAINONEN-AHLGREN, E, TOIS, E, TUOMINEN, M, HAUKKA, S

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A novel strained Si0.7Ge0.3 surface-channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack von Wu, D, Lindgren, A.-C, Persson, S, Sjoblom, G, von Haartman, M, Seger, J, Hellstrom, P.-E, Olsson, J, Blom, H.-O, Zhang, S.-L, Ostling, M, Vainonen-Ahlgren, E, Li, W.-M, Tois, E, Tuominen, M

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Excellent rear side passivation on multi-crystalline silicon solar cells with 20 nm uncapped Al2O3 layer: Industrialization of ALD for solar cell applications von Cesar, I, Granneman, E, Vermont, P, Tois, E, Manshanden, P, Geerligs, L J, Bende, E E, Burgers, A R, Mewe, A A, Komatsu, Y, Weeber, A W

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Influence of Surface Treatment Prior to ALD High- $kappa$ Dielectrics on the Performance of SiGe Surface-Channel pMOSFETs von Wu, D, Lu, J, Radamson, H, Hellstrom, P-E, Zhang, S-L, Ostling, M, Vainonen-Ahlgren, E, Tois, E, Tuominen, M

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Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe von WU, D, LU, J, VAINONEN-AHLGREN, E, TOIS, E, TUOMINEN, M, ÖSTLING, M, ZHANG, S.-L

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Ni-salicided CMOS with a poly-SiGe/Al2O3/HfO2/Al2O3 gate stack von WU, D, VON HAARTMAN, M, SEGER, J, TOIS, E, TUOMINEN, M, HELLSTRÖM, P.-E, ÖSTLING, M, ZHANG, S.-L

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HfSiO[sub 4] Dielectric Layers Deposited by ALD Using HfCl[sub 4] and NH[sub 2](CH[sub 2])[sub 3]Si(OC[sub 2]H[sub 5])[sub 3] Precursors von Rittersma, Z. M., Roozeboom, F., Verheijen, M. A., van Berkum, J. G. M., Dao, T., Snijders, J. H. M., Vainonen-Ahlgren, E., Tois, E., Tuominen, M., Haukka, S.

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Ligand creation via linking—a rapid and convenient method for construction of novel supported PyOX-ligands von Oila, Markku J., Tois, Jan E., Koskinen, Ari M.P.

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Charge conduction mechanisms of atomic-layer-deposited Er 2 O 3 thin films von Jinesh, K. B., Lamy, Y., Tois, E., Besling, W. F. A.

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Synthesis of a novel carboxy functionalized PyOX-ligand von Oila, Markku J., Tois, Jan E., Koskinen, Ari M.P.

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Cubic phase stabilization and improved dielectric properties of atomic-layer-deposited EryHf1-yOx thin films von Jinesh, K.B., Lamy, Y., Tois, E., Forti, R., Kaiser, M., Bakker, F., Wondergem, H.J., Besling, W.F.A., Roozeboom, F.

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Cubic phase stabilization and improved dielectric properties of atomic-layer-deposited Er y Hf 1-y O x thin films von Jinesh, K.B., Lamy, Y., Tois, E., Forti, R., Kaiser, M., Bakker, F., Wondergem, H.J., Besling, W.F.A., Roozeboom, F.

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Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1−yOx thin films von Jinesh, K. B., Besling, W. F. A., Tois, E., Klootwijk, J. H., Wolters, R., Dekkers, W., Kaiser, M., Bakker, F., Tuominen, M., Roozeboom, F.

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Silicon out-diffusion and aluminum in-diffusion in deviceswith atomic-layer deposited La 2 O 3 thin films von Jinesh, K. B., Lamy, Y., Wolters, R. A. M., Klootwijk, J. H., Tois, E., Roozeboom, F., Besling, W. F. A.

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Silicon out-diffusion and aluminum in-diffusion in devices with atomic-layer deposited La2O3 thin films von Jinesh, K. B., Lamy, Y., Wolters, R. A. M., Klootwijk, J. H., Tois, E., Roozeboom, F., Besling, W. F. A.

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Enhanced electrical properties of atomic layer deposited La 2 O 3 thin films with embedded ZrO 2 nanocrystals von Jinesh, K. B., Klootwijk, J. H., Lamy, Y., Wolters, R., Tois, E., Tuominen, M., Roozeboom, F., Besling, W. F. A.

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