Growth of semi-polar InN layer on GaAs (110) surface by MOVPE von Murakami, Hisashi, Chol Cho, Hyun, Suematsu, Mayu, Togashi, Rie, Kumagai, Yoshinao, Toba, Ryuichi, Koukitu, Akinori

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Reduction of dislocations in GaN films on AlN/sapphire templates using CrN nanoislands von Ha, Jun-Seok, Lee, Hyo-Jong, Lee, Seog Woo, Lee, Hyun Jae, Lee, Sang Hyun, Goto, Hiroki, Cho, Meoung Whan, Yao, Takafumi, Hong, Soon-Ku, Toba, Ryuichi, Lee, Jae Wook, Lee, Jeong Yong

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Development of high Al content AlGaN-based wavelength selective UV photodetector von Okumura, Takahiro, Toba, Ryuichi, Tanabe, Tadao, Ohashi, Takahiro, Oyama, Yutaka

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Development of AlGaN-based ultra-high UV(260nm)/VIS rejection photodetector von Tanabe, Tadao, Okumura, Takahiro, Tanaka, Mizuki, Toba, Ryuichi, Ohashi, Takahiro, Oyama, Yutaka

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ULTRAVIOLET LIGHT RECEIVING DEVICE von WATANABE, Yasuhiro, TOBA, Ryuichi

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Development of AlGaN-based solar blind photodetector von Okumura, Takahiro, Komuro, Shinya, Toba, Ryuichi, Tanabe, Tadao, Ohashi, Takahiro, Oyama, Yutaka

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Improvement of deep ultraviolet emission intensity by the well layer's compositional modulation von Oohashi, Takahiro, Toba, Ryuichi

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GAAS WAFER, GAAS WAFER GROUP, AND METHOD OF PRODUCING GAAS INGOT von AKAISHI, Akira, SUNACHI, Naoya, TOBA, Ryuichi

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GAAS WAFER AND METHOD FOR PRODUCING GAAS INGOT von AKAISHI, Akira, SUNACHI, Naoya, TOBA, Ryuichi

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GAAS WAFER, GAAS WAFER GROUP, AND METHOD FOR PRODUCING GAAS INGOT von AKAISHI, Akira, SUNACHI, Naoya, TOBA, Ryuichi

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GAAS INGOT, METHOD FOR MANUFACTURING GAAS INGOT, AND GAAS WAFER von AKAISHI, Akira, SUNACHI, Naoya, TOBA, Ryuichi

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The impact of an intermediate temperature buffer on the growth of GaN on an AlN template by hydride vapor phase epitaxy von Cho, Youngji, Ha, Jun-Seok, Jung, Mina, Lee, Hyun-Jae, Park, Seunghwan, Park, Jinsub, Fujii, Katsushi, Toba, Ryuichi, Yi, Samnyung, Kil, Gyung-Suk, Chang, Jiho, Yao, Takafumi

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Significant improvement of the AlGaN MQW's radiative recombination efficiency von Oohashi, Takahiro, Shiraiwa, Yoshiko, Toba, Ryuichi

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The temperature dependence of the CL intensity map of deep urtraviolet AlGaN MQW von Oohashi, Takahiro, Shiraiwa, Yoshiko, Toba, Ryuichi

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GaAs WAFER AND METHOD OF PRODUCING GaAs INGOT von AKAISHI, Akira, SUNACHI, Naoya, TOBA, Ryuichi

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GAAS WAFER AND METHOD FOR PRODUCING GAAS INGOT von AKAISHI, Akira, SUNACHI, Naoya, TOBA, Ryuichi

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GaAs INGOT AND METHOD OF PRODUCING GaAs INGOT, AND GaAs WAFER von AKAISHI, Akira, SUNACHI, Naoya, TOBA, Ryuichi

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Photocapacitance Measurement of AlGaN von Yamato, Shinnosuke, Ohi, Takuya, Ohashi, Takahiro, Shiraiwa, Yoshiko, Tanabe, Tadao, Toba, Ryuichi, Oyama, Yutaka

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The impact of an intermediate temperature buffer on the growth of GaN on an AIN template by hydride vapor phase epitaxy von CHO, Youngji, HA, Jun-Seok, JIHO CHANG, YAO, Takafumi, MINA JUNG, LEE, Hyun-Jae, PARK, Seunghwan, PARK, Jinsub, FUJII, Katsushi, TOBA, Ryuichi, YI, Samnyung, KIL, Gyung-Suk

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GAAS INGOT, METHOD FOR MANUFACTURING GAAS INGOT, AND GAAS WAFER von AKAISHI, Akira, SUNACHI, Naoya, TOBA, Ryuichi

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