Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals von Nazarov, A., Sun, J. M., Skorupa, W., Yankov, R. A., Osiyuk, I. N., Tjagulskii, I. P., Lysenko, V. S., Gebel, T.

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Reactivation of damaged rare earth luminescence centers in ion-implanted metal–oxide–silicon light emitting devices von Prucnal, S., Rebohle, L., Nazarov, A.N., Osiyuk, I.N., Tjagulskii, I.P., Skorupa, W.

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Correlation between defect-related electroluminescence and charge trapping in Gd-implanted SiO2 layers von PRUCNAL, S, SUN, J. M, NAZAROV, A, TJAGULSKII, I. P, OSIYUK, I. N, FEDARUK, R, SKORUPA, W

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Comparative Study of Charge Trapping in High-Dose Si and Ge-Implanted Al/SiO2/Si Structures von Nazarov, A, Skorupa, W, Osiyuk, I N, Tjagulskii, I P, Lysenko, V S, Yankov, R A, Gebel, T

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Comparative Study of Charge Trapping in High-Dose Si and Ge-Implanted Al/SiO[sub 2]/Si Structures von Nazarov, A., Skorupa, W., Osiyuk, I. N., Tjagulskii, I. P., Lysenko, V. S., Yankov, R. A., Gebel, T.

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