Nanostep movement and measurement von Tipissev, S.Ya, Golubok, A.O.

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Effect of growth kinetics on the [formula omitted] quantum dot arrays formation on vicinal surfaces von Cirlin, G.E., Petrov, V.N., Golubok, A.O., Tipissev, S.Ya, Dubrovskii, V.G., Guryanov, G.M., Ledentsov, N.N., Bimberg, D.

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An intermediate (1.0–1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy von Guryanov, G.M., Cirlin, G.E., Golubok, A.O., Tipissev, S.Ya, Ledentsov, N.N., Shchukin, V.A., Grundmann, M., Bimberg, D., Alferov, Zh.I.

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Formation of InGaAs/GaAs quantum dots by submonolayer molecular beam epitaxy von Guryanov, G.M., Cirlin, G.E., Petrov, V.N., Polyakov, N.K., Golubok, A.O., Tipissev, S.Ya, Musikhina, E.P., Gubanov, V.B., Samsonenko, Yu.B., Ledentsov, N.N.

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STM and RHEED study of [formula omitted] quantum dots obtained by submonolayer epitaxial techniques von Guryanov, G.M., Cirlin, G.E., Petrov, V.N., Polyakov, N.K., Golubok, A.O., Tipissev, S.Ya, Gubanov, V.B., Samsonenko, Yu.B., Ledentsov, N.N., Shchukin, V.A., Grundmann, M., Bimberg, D., Alferov, Zh.I.

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