Post-deposition growth kinetics of Ge on Ge(0 0 1) von Tinkham, B.P., Jenichen, B., Kaganer, V.M., Shayduk, R., Braun, W., Ploog, K.H.

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Structure and stability of Pr2O3/Si(0 0 1) heterostructures grown by molecular beam epitaxy using a high temperature effusion source von Tinkham, B P, Takahasi, M, Jenichen, B, Watahiki, T, Braun, W, Ploog, K H

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Modification of electrical properties induced by annealing of ZnO:B thin films deposited by chemical vapour deposition: Kinetic investigation of evolution von David, C., Paumier, F., Tinkham, B.P., Eyidi, D., Marteau, M., Guérin, P., Girardeau, T.

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Microstructural and conductivity changes induced by annealing of ZnO:B thin films deposited by chemical vapour deposition von David, C, Girardeau, T, Paumier, F, Eyidi, D, Lacroix, B, Papathanasiou, N, Tinkham, B P, Guérin, P, Marteau, M

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X-ray standing wave study of Si/Ge/Si( [formula omitted]) heterostructures grown with Bi as a surfactant von Rodrigues, W., Tinkham, B.P., Sakata, O., Lee, T.-L., Kazimirov, A., Bedzyk, M.J.

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X-ray standing wave study of the Sr/Si( [formula omitted])-( [formula omitted]) surface von Goodner, D.M., Marasco, D.L., Escuadro, A.A., Cao, L., Tinkham, B.P., Bedzyk, M.J.

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Highly conductive and transparent ITO films deposited at low temperatures by pulsed DC magnetron sputtering from ceramic and metallic rotary targets von David, C., Tinkham, B.P., Prunici, P., Panckow, A.

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Narrow band gap InGaSb, InAlAsSb alloys for electronic devices von Magno, R., Glaser, E. R., Tinkham, B. P., Champlain, J. G., Boos, J. B., Ancona, M. G., Campbell, P. M.

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GaSb(001) Surface Reconstructions Measured at the Growth Front by Surface X-ray Diffraction von Tinkham, B.P., Romanyuk, O., Braun, W., Ploog, K.H., Grosse, F., Takahasi, M., Kaizu, T., Mizuki, J.

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Surface And Interface Studies At APS Endstation 5ID-C von Walko, D A, Sakata, O, Lyman, P F, Lee, T-L, Tinkham, B P, Okasinski, J S, Zhang, Z, Bedzyk, M J

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Pd/Pt/Au ohmic contact for AlSb/InAs0.7Sb0.3 heterostructures von ROBINSON, J. A, MOHNEY, S. E, BOOS, J. B, TINKHAM, B. P, BENNETT, B. R

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InAlAsSb/InGaSb double heterojunction bipolar transistor von Magno, R., Boos, J.B., Campbell, P.M., Bennett, B.R., Glaser, E.R., Tinkham, B.P., Ancona, M.G., Hobart, K.D., Park, D., Papanicolaou, N.A.

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Photoluminescence properties of Zn-doped heterostructures having native-oxide layers von Tinkham, B. P., Dupuis, R. D.

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Microstructural and conductivity changes induced by annealing of ZnO:B thin films deposited by chemical vapour deposition : SEMICONDUCTING OXIDES von DAVID, C, GIRARDEAU, T, PAUMIER, F, EYIDI, D, LACROIX, B, PAPATHANASIOU, N, TINKHAM, B. P, GUERIN, P, MARTEAU, M

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X-ray scattering study of the Ge(001):Te(1x1) surface structure von Sakata, Osami, Lyman, P. F., Tinkham, B. P., Walko, D. A., Marasco, D. L., Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, Lee, T.-L., Bedzyk, M. J.

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Low-frequency noise characteristics of AlSb/InAsSb HEMTs von Kruppa, W., Boos, J.B., Bennett, B.R., Tinkham, B.P.

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As-rich InAs(001)-(2×4) phases investigated by in situ surface x-ray diffraction von Tinkham, B. P., Braun, W., Ploog, K. H., Takahasi, M., Mizuki, J., Grosse, F.

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Nanoscale structure and chemistry of Al0.49In0.51P thermal oxide von Mathes, D. T., Hull, R., Dupuis, R. D., Heller, R. D., Tinkham, B. P.

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Structure and stability of Pr 2 O 3 /Si(0 0 1) heterostructures grown by molecular beam epitaxy using a high temperature effusion source von Tinkham, B P, Takahasi, M, Jenichen, B, Watahiki, T, Braun, W, Ploog, K H

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GaSb(001) Surface Reconstructions Measured at the Growth Front by Surface X-ray Diffraction : Narrow band gap semiconductors von TINKHAM, B. P, ROMANYUK, O, BRAUN, W, PLOOG, K. H, GROSSE, F, TAKAHASI, M, KAIZU, T, MIZUKI, J

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