Low-parameter method for delineation of agricultural fields in satellite images based on multi-temporal MSAVI2 data von Pavlova, M.A., Timofeev, V.A., Bocharov, D.A., Sidorchuk, D.S., Nurmukhametov, A.L., Nikonorov, A.V., Yarykina, M.S., Kunina, I.A., Smagina, A.A., Zagarev, M.A.

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Sn – Induced decomposition of SiGeSn alloys grown on Si by molecular-beam epitaxy von Talochkin, A.B., Timofeev, V.A., Gutakovskii, A.K., Mashanov, V.I.

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Reflection high energy electron diffraction studies on SixSnyGe1−x−y on Si(100) molecular beam epitaxial growth von Nikiforov, A.I., Mashanov, V.I., Timofeev, V.A., Pchelyakov, O.P., Cheng, H.-H.

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Efficient technologies for making gypsum binders von Gabitov, A I, Salov, A S, Ryazanova, V A, Timofeev, A A, Timofeev, V A

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Elastically stressed pseudomorphic SiSn island array formation with a pedestal on the Si(1 0 0) substrate using Sn as a growth catalyst von Nikiforov, A.I., Timofeev, V.A., Mashanov, V.I., Gavrilova, T.A., Gulyaev, D.V.

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Cloud shadows detection and compensation algorithm on multispectral satellite images for agriculture regions von Bocharov, D.A., Nikolaev, D.P., Pavlova, M.A., Timofeev, V.A.

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Utilization of chemical waste and by-products as one of technological progress directions von Gabitov, A I, Ryazanova, V A, Rolnik, L Z, Salov, A S, Timofeev, V A

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Acoustic Phonons in Periodical GeSiSn/Si Nanostructures von Anikin, K.V., Timofeev, V.A., Solonenko, D., Nikiforov, A.I., Milekhin, A.G., Zahn, D. R.T.

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Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100) von Nikiforov, A.I., Timofeev, V.A., Tuktamyshev, A.R., Yakimov, A.I., Mashanov, V.I., Gutakovskii, A.K.

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PHYSICS OF SEMICONDUCTORS AND QUANTUM ELECTRONICS: MORPHOLOGY, STRUCTURE, AND OPTICAL PROPERTIES OF SnO FILMS von Nikiforov, A.I, Timofeev, V.A, Mashanov, V.I, Azarov, I.A, Loshkarev, I.D, Korolkov, I.V, Gavrilova, T.A, Esin, M.Yu

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Structural and Optical Properties of a Hybrid Material Based on Tin Oxides and Multilayer Periodic Structures with Pseudomorphic GeSiSn Layers von Timofeev, V. A., Mashanov, V. I., Nikiforov, A. I., Loshkarev, I. D., Skvortsov, I. V., Gulyaev, D. V., Korolkov, I. V., Kolyada, D. V., Firsov, D. D., Komkov, O. S.

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Physics of semiconductors and dielectrics growth of epitaxial SiSn films with high Sn content for IR converters von Timofeev, V.A, Nikiforov, A.I, Kokhanenko, A.P, Tuktamyshev, A.R, Mashanov, V.I, Loshkarev, I.D, Novikov, V.A

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Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands von Esin, M. Yu, Nikiforov, A. I., Timofeev, V. A., Tuktamyshev, A. R., Mashanov, V. I., Loshkarev, I. D., Deryabin, A. S., Pchelyakov, O. P.

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Studying the Formation of Si (100) Stepped Surface in Molecular-Beam Epitaxy von Esin, M. Yu, Hervieu, Yu. Yu, Timofeev, V. A., Nikiforov, A. I.

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Strained multilayer structures with pseudomorphic GeSiSn layers von Timofeev, V. A., Nikiforov, A. I., Tuktamyshev, A. R., Yesin, M. Yu, Mashanov, V. I., Gutakovskii, A. K., Baidakova, N. A.

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On the process of hole trapping in Ge/Si heterostructures with Ge quantum dots von Bloshkin, A. A., Yakimov, A. I., Timofeev, V. A., Dvurechenskii, A. V.

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Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy von Tuktamyshev, A. R., Mashanov, V. I., Timofeev, V. A., Nikiforov, A. I., Teys, S. A.

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Ge and GexSi1−x islands formation on GexSi1−x solid solution surface von Nikiforov, A.I., Timofeev, V.A., Teys, S.A., Gutakovsky, A.K., Pchelyakov, O.P.

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Valence-band offsets in strained SiGeSn/Si layers with different tin contents von Bloshkin, A. A., Yakimov, A. I., Timofeev, V. A., Tuktamyshev, A. R., Nikiforov, A. I., Murashov, V. V.

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On the fine structure of spectra of the inelastic-electron-scattering cross section and the Si surface parameter von Parshin, A. S., Igumenov, A. Yu, Mikhlin, Yu. L., Pchelyakov, O. P., Nikiforov, A. I., Timofeev, V. A.

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