A Physics-Based Causal Bond-Wire Model for RF Applications von Nazarian, A. L., Tiemeijer, L. F., John, D. L., van Steenwijk, J. A., de Langen, M., Pijper, R. M. T.

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Two Multiport De-Embedding Methods for Accurate On-Wafer Characterization of 60-GHz Differential Amplifiers von Tiemeijer, Luuk F, Pijper, Ralf M T, van der Heijden, Edwin

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Analysis, Design, Modeling, and Characterization of Low-Loss Scalable On-Chip Transformers von Tiemeijer, L. F., Pijper, R. M. T., Andrei, C., Grenados, E.

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Low-Loss Patterned Ground Shield Interconnect Transmission Lines in Advanced IC Processes von Tiemeijer, L.F., Pijper, R.M.T., Havens, R.J., Hubert, O.

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A New 12-Term Open-Short-Load De-Embedding Method for Accurate On-Wafer Characterization of RF MOSFET Structures von Tiemeijer, L.F., Pijper, R.M.T., van Steenwijk, J.A., van der Heijden, E.

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RF-Noise Modeling in Advanced CMOS Technologies von Smit, Geert D. J., Scholten, Andries J., Pijper, Ralf M. T., Tiemeijer, Luuk F., van der Toorn, Ramses, Klaassen, Dirk B. M.

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The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications von Scholten, A.J., Smit, G.D.J., De Vries, B.A., Tiemeijer, L.F., Croon, J.A., Klaassen, D.B.M., van Langevelde, R., Xin Li, Weimin Wu, Gildenblat, G.

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Complete On-Wafer Noise-Figure Characterization of 60-GHz Differential Amplifiers von Tiemeijer, Luuk F, Pijper, Ralf M T, van der Heijden, Edwin

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On the Accuracy of the Parameters Extracted From S-Parameter Measurements Taken on Differential IC Transmission Lines von Tiemeijer, L.F., Pijper, R., van Noort, W.

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Improved Y-factor method for wide-band on-wafer noise-parameter measurements von Tiemeijer, L.F., Havens, R.J., de Kort, R., Scholten, A.J.

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Physics-based wideband predictive compact model for inductors with high amounts of dummy metal fill von Tiemeijer, L.F., Havens, R.J., Bouttement, Y., Pranger, H.J.

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Systematic Lumped-Element Modeling of Differential IC Transmission Lines von Tiemeijer, L.F., Pijper, R.M.T., van Steenwijk, J.A., van Noort, W.

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Experimental Demonstration and Modeling of Excess RF Noise in Sub-100-nm CMOS Technologies von Smit, Geert D J, Scholten, Andries J, Pijper, Ralf M T, van Langevelde, Ronald, Tiemeijer, Luuk F, Klaassen, Dirk B M

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Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers von Thiis, P.J.A., Tiemeijer, L.F., Binsma, J.J.M., Van Dongen, T.

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Impact of downscaling and poly-gate depletion on the RF noise parameters of advanced nMOS transistors von Nuttinck, S., Scholten, A.J., Tiemeijer, L.F., Cubaynes, F., Dachs, C., Detcheverry, C., Hijzen, E.A.

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X-Parameters Based Characterization and Compact Modeling of SiGe HBT Linearity von Niu, G., Zhang, Anni, Li, Yiao, Zhang, Huaiyuan, Scholten, Andries, Willemsen, Marnix, Pijper, Ralf, Tiemeijer, L.F.

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Noise modeling for RF CMOS circuit simulation von Scholten, A.J., Tiemeijer, L.F., van Langevelde, R., Havens, R.J., Zegers-van Duijnhoven, A.T.A., Venezia, V.C.

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Test structure design considerations for RF-CV measurements on leaky dielectrics von Schmitz, J., Cubaynes, F.N., Havens, R.J., de Kort, R., Scholten, A.J., Tiemeijer, L.F.

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A calibrated lumped-element de-embedding technique for on-wafer RF characterization of high-quality inductors and high-speed transistors von Tiemeijer, L.F., Havens, R.J.

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Comparison of the "pad-open-short" and "open-short-load" deembedding techniques for accurate on-wafer RF characterization of high-quality passives von Tiemeijer, L.F., Havens, R.J., Jansman, A.B.M., Bouttement, Y.

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