Simple activated transport in ion-implanted Si:As at temperatures below 0.5 K von van der Heijden, R.W., Chen, G., de Waele, A.T.A.M., Gijsman, H.M., Tielen, F.P.B.

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Temperature and electric field dependence of hopping transport in ion-implanted Si:As von Gang, Chen, Koppen, H.D., van der Heijden, R.W., de Waele, A.T.A.M., Gijsman, H.M., Tielen, F.P.B.

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Electrical transport in as ion-implanted si in the metal-insulator transition range von Gang, Chen, Van Der Heijden, R.W., De Waele, A.T.A.M., Gijsman, H.M., Tielen, F.P.B.

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