A Memory-Based FFT Processor Design With Generalized Efficient Conflict-Free Address Schemes von Xia, Kai-Feng, Wu, Bin, Xiong, Tao, Ye, Tian-Chun

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Improved Turbo Decoding With Multivariable Taylor Series Expansion von Liu, Zhen, Wu, Bin, Ye, Tian-Chun

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QoS-Aware A-MPDU Retransmission Scheme for 802.11n/ac/ad WLANS von Qian, Xu, Wu, Bin, Ye, Tian-Chun

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The sheet resistance of graphene under contact and its effect on the derived specific contact resistivity von Peng, Song-ang, Jin, Zhi, Ma, Peng, Zhang, Da-yong, Shi, Jing-yuan, Niu, Jie-bin, Wang, Xuan-yun, Wang, Shao-qing, Li, Mei, Liu, Xin-yu, Ye, Tian-chun, Zhang, Yan-hui, Chen, Zhi-ying, Yu, Guang-hui

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Femtosecond direct laser writing of gold nanostructures by ionic liquid assisted multiphoton photoreduction von Lu, Wei-Er, Zhang, Yong-Liang, Zheng, Mei-Ling, Jia, Yan-Peng, Liu, Jie, Dong, Xian-Zi, Zhao, Zhen-Sheng, Li, Chao-Bo, Xia, Yang, Ye, Tian-Chun, Duan, Xuan-Ming

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Heavily p-type doped chemical vapor deposition graphene field-effect transistor with current saturation von Peng, Song-ang, Jin, Zhi, Ma, Peng, Yu, Guang-hui, Shi, Jing-yuan, Zhang, Da-yong, Chen, Jiao, Liu, Xin-yu, Ye, Tian-chun

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A Hardware Efficient Multiple-Stream Pipeline FFT Processor for MIMO-OFDM Systems von XIA, Kai-Feng, WU, Bin, XIONG, Tao, YE, Tian-Chun, CHEN, Cheng-Ying

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Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high- k /metal gate nMOSFETs with gate-last process von Qi, Lu-Wei, Yang, Hong, Ren, Shang-Qing, Xu, Ye-Feng, Luo, Wei-Chun, Xu, Hao, Wang, Yan-Rong, Tang, Bo, Wang, Wen-Wu, Yan, Jiang, Zhu, Hui-Long, Zhao, Chao, Chen, Da-Peng, Ye, Tian-Chun

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Energy distribution extraction of negative charges responsible for positive bias temperature instability von Ren, Shang-Qing, Yang, Hong, Wang, Wen-Wu, Tang, Bo, Tang, Zhao-Yun, Wang, Xiao-Lei, Xu, Hao, Luo, Wei-Chun, Zhao, Chao, Yan, Jiang, Chen, Da-Peng, Ye, Tian-Chun

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Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high- k /metal gate last process von Wang, Yan-Rong, Yang, Hong, Xu, Hao, Wang, Xiao-Lei, Luo, Wei-Chun, Qi, Lu-Wei, Zhang, Shu-Xiang, Wang, Wen-Wu, Yan, Jiang, Zhu, Hui-Long, Zhao, Chao, Chen, Da-Peng, Ye, Tian-Chun

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Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates von Pan, Hong-Liang (洪亮潘), Jin, Zhi (智金), Ma, Peng (芃麻), Guo, Jian-Nan (建楠郭), Liu, Xin-Yu (新宇刘), Ye, Tian-Chun (甜春叶), Li, Jia (佳李), Dun, Shao-Bo (少博敦), Feng, Zhi-Hong (志红冯)

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A HIGH-SWING CLASS-C VCO WITH AMPLITUDE FEEDBACK LOOP FOR LOW PHASE NOISE AND ROBUST START-UP von Liu, Qi, Gan, Ye-Bing, Ye, Tian-Chun

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Understanding and Mitigating Stress Memorization Technique of Induced Layout Dependencies for NMOS HKMG Device von Wang, Ying-Fei, Zhang, Qing-Chun, Li, Ping, Su, Xiao-Jing, Dong, Li-Song, Chen, Rui, Zhang, Li-Bin, Gai, Tian-Yang, Su, Ya-Juan, Wei, Ya-Yi, Ye, Tian Chun

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Chemical Vapour Deposition Graphene Radio-Frequency Field-Effect Transistors von Ma, Peng, Jin, Zhi, Guo, Jian-Nan, Pan, Hong-Liang, Liu, Xin-Yu, Ye, Tian-Chun, Wang, Hong, Wang, Guan-Zhong

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A novel method for sacrificial layer release in MEMS devices fabrication von 石莎莉 陈大鹏 景玉鹏 欧毅 叶甜春 徐秋霞

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Fabrication and Characterization of Si Nanocrystals Synthesized by Electron Beam Evaporation of Si and SiO2 Mixture von Wei-Long, Li, Rui, Jia, Ming, Liu, Chen, Chen, Chang-Qing, Xie, Chen-Xin, Zhu, Hao-Feng, Li, Pei-Wen, Zhang, Tian-Chun, Ye

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On the Manifestation of Ge Pre-Amorphization Implantation (PAI) in Forming Ultrathin TiSix for Ti Direct Contact on Si in Sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS... von Mao, Shu-Juan, Xu, Jing, Wang, Gui-Lei, Luo, Jun, Duan, Ning-Yuan, Simoen, Eddy, Radamson, Henry, Wang, Wen-Wu, Chen, Da-Peng, Li, Jun-Feng, Zhao, Chao, Ye, Tian-Chun

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Micro thermal shear stress sensor based on vacuum anodic bonding and bulk-micromachining von Liang, Yi, Yi, Ou, Sha-Li, Shi, Jin, Ma, Da-Peng, Chen, Tian-Chun, Ye

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Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations von 徐昊 杨红 罗维春 徐烨峰 王艳蓉 唐波 王文武 祁路伟 李俊峰 闫江 朱慧珑 赵超 陈大鹏 叶甜春

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Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation von 徐昊 杨红 王艳蓉 王文武 罗维春 祁路伟 李俊峰 赵超 陈大鹏 叶甜春

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