The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem von Massabuau, F. C.-P., Davies, M. J., Oehler, F., Pamenter, S. K., Thrush, E. J., Kappers, M. J., Kovács, A., Williams, T., Hopkins, M. A., Humphreys, C. J., Dawson, P., Dunin-Borkowski, R. E., Etheridge, J., Allsopp, D. W. E., Oliver, R. A.

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Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells von Massabuau, F. C.-P., Trinh-Xuan, L., Lodié, D., Thrush, E. J., Zhu, D., Oehler, F., Zhu, T., Kappers, M. J., Humphreys, C. J., Oliver, R. A.

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Optical and microstructural studies of InGaN∕GaN single-quantum-well structures von Graham, D. M., Soltani-Vala, A., Dawson, P., Godfrey, M. J., Smeeton, T. M., Barnard, J. S., Kappers, M. J., Humphreys, C. J., Thrush, E. J.

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Misfit dislocations in In-rich InGaN/GaN quantum well structures von Costa, P. M. F. J., Datta, R., Kappers, M. J., Vickers, M. E., Humphreys, C. J., Graham, D. M., Dawson, P., Godfrey, M. J., Thrush, E. J., Mullins, J. T.

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Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering von Vickers, M. E., Kappers, M. J., Smeeton, T. M., Thrush, E. J., Barnard, J. S., Humphreys, C. J.

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The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes von Oliver, R. A., Massabuau, F. C.-P., Kappers, M. J., Phillips, W. A., Thrush, E. J., Tartan, C. C., Blenkhorn, W. E., Badcock, T. J., Dawson, P., Hopkins, M. A., Allsopp, D. W. E., Humphreys, C. J.

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Indium segregation in InGaN quantum-well structures von Duxbury, N., Bangert, U., Dawson, P., Thrush, E. J., Van der Stricht, W., Jacobs, K., Moerman, I.

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Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures von Zhu, D., Kappers, M.J., McAleese, C., Graham, D.M., Chabrol, G.R., Hylton, N.P., Dawson, P., Thrush, E.J., Humphreys, C.J.

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Degradation of GaN-based quantum well light-emitting diodes von Zhao, L. X., Thrush, E. J., Humphreys, C. J., Phillips, W. A.

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Exciton localization in InGaN/GaN single quantum well structures von Graham, D. M., Vala, A. Soltani, Dawson, P., Godfrey, M. J., Kappers, M. J., Smeeton, T. M., Barnard, J. S., Humphreys, C. J., Thrush, E. J.

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Structural properties of ultrathin InGaN/GaN quantum wells von Sahonta, S.-L., Komninou, Ph, Dimitrakopulos, G. P., Salcianu, C., Thrush, E. J., Karakostas, Th

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Towards a better understanding of trench defects in InGaN/GaN quantum wells von Massabuau, F C-P, Trinh-Xuan, L, Lodié, D, Sahonta, S-L, Rhode, S, Thrush, E J, Oehler, F, Kappers, M J, Humphreys, C J, Oliver, R A

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A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers von Zhu, D., Kappers, M. J., Costa, P. M. F. J., McAleese, C., Rayment, F. D. G., Chabrol, G. R., Graham, D. M., Dawson, P., Thrush, E. J., Mullins, J. T., Humphreys, C. J.

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Fundamental models of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design von Pawlowski, R.P, Theodoropoulos, C, Salinger, A.G, Mountziaris, T.J, Moffat, H.K, Shadid, J.N, Thrush, E.J

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Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors von Dauelsberg, M., Martin, C., Protzmann, H., Boyd, A.R., Thrush, E.J., Käppeler, J., Heuken, M., Talalaev, R.A., Yakovlev, E.V., Kondratyev, A.V.

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Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates von Gibbon, M, Stagg, J P, Cureton, C G, Thrush, E J, Jones, C J, Mallard, R E, Pritchard, R E, Collis, N, Chew, A

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High quantum efficiency InGaN/GaN structures emitting at 540 nm von Graham, D. M., Dawson, P., Godfrey, M. J., Kappers, M. J., Costa, P. M. F. J., Vickers, M. E., Datta, R., Humphreys, C. J., Thrush, E. J.

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Material optimisation for AlGaN/GaN HFET applications von Bougrioua, Z., Moerman, I., Sharma, N., Wallis, R.H., Cheyns, J., Jacobs, K., Thrush, E.J., Considine, L., Beanland, R., Farvacque, J.-L., Humphreys, C.

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Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures von Harris, J J, Lee, K J, Wang, T, Sakai, S, Bougrioua, Z, Moerman, I, Thrush, E J, Webb, J B, Tang, H, Martin, T, Maude, D K, Portal, J-C

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Studies of efficiency droop in GaN based LEDs von Phillips, W. A., Thrush, E. J., Zhang, Y., Humphreys, C. J.

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