Performance evaluation of GaN etching using Cl2-based plasma with bias pulsing von Ruel, Simon, Pimenta-Barros, Patricia, Pezeril, Maxime, Thoueille, Philippe, Gaucher, François, Posseme, Nicolas

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Atomic layer etching of GaN using Cl2 and He or Ar plasma von Ruel, Simon, Pimenta-Barros, Patricia, Le Roux, Frédéric, Chauvet, Nicolas, Massardier, Michel, Thoueille, Philippe, Tan, Shirley, Shin, Daniel, Gaucher, François, Posseme, Nicolas

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METHOD FOR PLASMA ETCHING A LAYER BASED ON A III-N MATERIAL von RUEL, Simon, PIMENTA BARROS, Patricia, HELMER, Bryan, THOUEILLE, Philippe, POSSEME, Nicolas

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METHOD FOR PLASMA ETCHING A LAYER BASED ON A III-N MATERIAL von RUEL, Simon, PIMENTA BARROS, Patricia, HELMER, Bryan, THOUEILLE, Philippe, POSSEME, Nicolas

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METHOD FOR PLASMA ETCHING A LAYER BASED ON A III-N MATERIAL von Helmer, Bryan, Pimenta Barros, Patricia, Thoueille, Philippe, Posseme, Nicolas, Ruel, Simon

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