Measurement of optical cavity properties in semiconductor lasers by Fourier analysis of the emission spectrum von Hofstetter, D., Thornton, R.L.

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Indium tin oxide transparent electrodes for broad-area top-emitting vertical-cavity lasers fabricated using a single lithography step von Chua, C.L., Thornton, R.L., Treat, D.W., Yang, V.K., Dunnrowicz, C.C.

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Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes von Bour, D.P., Geels, R.S., Treat, D.W., Paoli, T.L., Ponce, F., Thornton, R.L., Krusor, B.S., Bringans, R.D., Welch, D.F.

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Drift leakage current in AlGaInP quantum-well lasers von Bour, D.P., Treat, D.W., Thornton, R.L., Geels, R.S., Welch, D.F.

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Independently addressable VCSEL arrays on 3-μm pitch von Chua, C.L., Thornton, R.L., Treat, D.W., Donaldson, R.M.

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Planar laterally oxidized vertical-cavity lasers for low-threshold high-density top-surface-emitting arrays von Chua, C.L., Thornton, R.L., Treat, D.W.

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Si diffusion and intermixing in AlGaAs/GaAs structures using buried impurity sources von Beernink, K. J., Thornton, R. L., Anderson, G. B., Emanuel, M. A.

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Vertical cavity lasers for printing von Thornton, R.L.

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Doped contacts for high-longevity optically activated, high gain GaAs photoconductive semiconductor switches von Mar, A., Loubriel, G.M., Zutavern, F.J., O'Malley, M.W., Helgeson, W.D., Brown, D.J., Hjalmarson, H.P., Baca, A.G., Thornton, R.L., Donaldson, R.D.

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Tensile-strained AlGaAsP and InGaAsP-(AlGa)/sub 0.5/In/sub 0.5/P quantum well laser diodes for TM-mode emission in the wavelength range 650 </spl lambda/<850 nm von Bour, D.P., Treat, D.W., Beernink, K.J., Thornton, R.L., Paoli, T.L., Bringans, R.D.

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The Impact Of The Impurity Induced Layer Disordering Process On Optoelectronic Microfabrication von Thornton, R.L.

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Dual-polarization, single quantum-well AlGaInP laser diode structure von Bour, D.P., Beernink, K.J., Treat, D.W., Paoli, T.L., Thornton, R.L.

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Characteristics of short-wavelength (617< lambda <640 nm) Ga/sub 0.4/In/sub 0.6/P/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P strained, thin multiple-quantum-well lasers von Bour, D.P., Treat, D.W., Thornton, R.L., Bringans, R.D., Paoli, T.L., Geels, R.S., Welch, D.F.

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High power (2.1 W) 10-stripe AlGaAs laser arrays with Si disordered facet windows von THORNTON, R. L, WELCH, D. F, BURNHAM, R. D, PAOLI, T. L, CROSS, P. S

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Unified planar process for fabricating heterojunction bipolar transistors and buried-heterostructure lasers utilizing impurity-induced disordering von THORNTON, R. L, MOSBY, W. J, CHUNG, H. F

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LOW THRESHOLD GAXIN1-XP(ALYGA1-Y)0.5IN0.5P STRAINED QUANTUM-WELL LASERS von BOUR, DP, TREAT, DW, THORNTON, RL, PAOLI, TL, BRINGANS, RD, KRUSOR, BS, GEELS, RS, WELCH, DF, WANG, TY

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Very low threshold buried heterostructure quantum well lasers by laser-assisted disordering von EPLER, J. E, THORNTON, R. L, PAOLI, T. L

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Low threshold Ga xIn 1− xP/(Al yGa 1− y) 0.5In 0.5P strained quantum well lasers von Bour, D.P., Treat, D.W., Thornton, R.L., Paoli, T.L., Bringans, R.D., Krusor, B.S., Geels, R.S., Welch, D.F., Wang, T.Y.

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Monolithic integration of a transparent dielectric waveguide into an active laser cavity by impurity-induced disordering von THORNTON, R. L, EPLER, J. E, PAOLI, T. L

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Demonstration and properties of a planar heterojunction bipolar transistor with lateral current flow von Thornton, R.L., Mosby, W.J., Chung, H.F.

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