Effects of forward gate bias stressing on the leakage current of AlGaN/GaN high electron mobility transistors von Gao, Y., Sasangka, W.A., Thompson, C.V., Gan, C.L.

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Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation von Syaranamual, G.J., Sasangka, W.A., Made, R.I., Arulkumaran, S., Ng, G.I., Foo, S.C., Gan, C.L., Thompson, C.V.

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Crack-like grain-boundary diffusion wedges in thin metal films von Gao, H., Zhang, L., Nix, W.D., Thompson, C.V., Arzt, E.

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Structural analysis of metalorganic chemical vapor deposited AIN nucleation layers on Si (1 1 1) von Zang, K.Y, Wang, L.S, Chua, S.J, Thompson, C.V

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Matching Glass-Forming Ability with the Density of the Amorphous Phase von Li, Y, Guo, Q, Kalb, J.A, Thompson, C.V

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P17-04 An automated tool for selection of chemical analogues to facilitate development of new physiologically-based kinetic models using a read-across approach von Thompson, C.V., Webb, S.D., Leedale, J., Penson, P.E., Paini, A., Ebbrell, D., Madden, J.C.

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Steady-state grain-size distributions resulting from grain growth in two dimensions von Fayad, W., Thompson, C.V., Frost, H.J.

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Phase-Change Materials in Optically Triggered Microactuators von Kalb, J.A., Qiang Guo, Xiaoqiang Zhang, Yi Li, Chornghaur Sow, Thompson, C.V.

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Computer simulation of strain energy effects vs surface and interface energy effects on grain growth in thin films von Carel, R., Thompson, C.V., Frost, H.J.

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Capillary instabilities in thin, continuous films von Jiran, E., Thompson, C.V.

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Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress von Tan, H.T., Gao, Y., Syaranamual, G.J., Sasangka, W.A., Foo, S.C., Lee, K.H., Arulkumaran, S., Ng, G.I., Thompson, C.V., Gan, C.L.

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Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors von Sasangka, W.A., Gao, Y., Gan, C.L., Thompson, C.V.

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Growth of giant grains in silver thin films von Greiser, J, Müller, D, Müllner, P, Thompson, C.V, Arzt, E

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Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation von Sasangka, W.A., Syaranamual, G.J., Gao, Y., I Made, R., Gan, C.L., Thompson, C.V.

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A hierarchical reliability analysis for circuit design evaluation von Riege, S.P., Thompson, C.V., Clement, J.J.

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Characterisation of defects generated during constant current InGaN-on-silicon LED operation von Made, R.I, Gao, Yu, Syaranamual, G.J., Sasangka, W.A., Zhang, L., Nguyen, Xuan Sang, Tay, Y.Y., Herrin, J.S., Thompson, C.V., Gan, C.L.

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Preparation of (0 0 1)-oriented PZT thin films on silicon wafers using pulsed laser deposition von Zhao, Jing, Lu, Li, Thompson, C.V., Lu, Y.F., Song, W.D.

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Methodology for electromigration critical threshold design rule evaluation von Clement, J.J., Riege, S.P., Cvijetic, R., Thompson, C.V.

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Field emission from a large area of vertically-aligned carbon nanofibers with nanoscale tips and controlled spatial geometry von Yun, Jia, Wang, Rui, Choi, W.K., Thong, J.T.L., Thompson, C.V., Zhu, Mei, Foo, Y.L., Hong, M.H.

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Dislocation pile-ups as sites for formation of electromigration-induced transgranular slit-like voids in Al interconnects von Srikar, V.T, Thompson, C.V

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