Correlation between the transport mechanisms in conductive filaments inside Ta2O5-based resistive switching devices and in substoichiometric TaOx thin films von Rosário, Carlos M. M., Thöner, Bo, Schönhals, Alexander, Menzel, Stephan, Wuttig, Matthias, Waser, Rainer, Sobolev, Nikolai A., Wouters, Dirk J.

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Evidence of Enhanced Carrier Collection in Cu(In,Ga)Se2 Grain Boundaries: Correlation with Microstructure von Raghuwanshi, Mohit, Thöner, Bo, Soni, Purvesh, Wuttig, Matthias, Wuerz, Roland, Cojocaru-Mirédin, Oana

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Evidence of Enhanced Carrier Collection in Cu(In,Ga)Se 2 Grain Boundaries: Correlation with Microstructure von Raghuwanshi, Mohit, Thöner, Bo, Soni, Purvesh, Wuttig, Matthias, Wuerz, Roland, Cojocaru-Mirédin, Oana

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Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaO x thin film with x ∼ 1 von Rosário, Carlos M M, Thöner, Bo, Schönhals, Alexander, Menzel, Stephan, Meledin, Alexander, Barradas, Nuno P, Alves, Eduardo, Mayer, Joachim, Wuttig, Matthias, Waser, Rainer, Sobolev, Nikolai A, Wouters, Dirk J

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Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaO thin film with ∼ 1 von Rosário, Carlos M. M, Thöner, Bo, Schönhals, Alexander, Menzel, Stephan, Meledin, Alexander, Barradas, Nuno P, Alves, Eduardo, Mayer, Joachim, Wuttig, Matthias, Waser, Rainer, Sobolev, Nikolai A, Wouters, Dirk J

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Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x ∼ 1 von Rosário, Carlos M M, Thöner, Bo, Schönhals, Alexander, Menzel, Stephan, Meledin, Alexander, Barradas, Nuno P, Alves, Eduardo, Mayer, Joachim, Wuttig, Matthias, Waser, Rainer, Sobolev, Nikolai A, Wouters, Dirk J

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