New scanning tunneling microscopy technique enables systematic study of the unique electronic transition from graphite to graphene von Xu, P., Yang, Yurong, Barber, S.D., Schoelz, J.K., Qi, D., Ackerman, M.L., Bellaiche, L., Thibado, P.M.

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Exact traveling and non-traveling wave solutions of the time fractional reaction–diffusion equation von Zheng, Bailin, Kai, Yue, Xu, Wenlong, Yang, Nan, Zhang, Kai, Thibado, P.M.

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Thermal mirror buckling in freestanding graphene locally controlled by scanning tunnelling microscopy von Neek-Amal, M., Xu, P., Schoelz, J.K., Ackerman, M.L., Barber, S.D., Thibado, P.M., Sadeghi, A., Peeters, F.M.

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Atomic control of strain in freestanding graphene von Xu, P., Yang, Yurong, Barber, S. D., Ackerman, M. L., Schoelz, J. K., Qi, D., Kornev, Igor A., Dong, Lifeng, Bellaiche, L., Barraza-Lopez, Salvador, Thibado, P. M.

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Electrical and optical studies of GaMnAs/GaAs(0 0 1) thin films grown by molecular beam epitaxy von Xu, J.F., Liu, S.W., Xiao, Min, Thibado, P.M.

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Origins of GaN(0 0 0 1) surface reconstructions von Vézian, S, Semond, F, Massies, J, Bullock, D.W, Ding, Z, Thibado, P.M

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Origin of Non-Gaussian Velocity Distribution Found in Freestanding Graphene Membranes von Zhang, Kai, Yang, Nan, Zheng, Bailin, Xu, Wenlong, Kai, Yue, Thibado, P. M.

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Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC von Xu, P., Qi, D., Schoelz, J.K., Thompson, J., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K., Neek-Amal, M., Peeters, F.M.

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Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface von Xu, P., Ackerman, M.L., Barber, S.D., Schoelz, J.K., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

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Controlling Mn depth profiles in GaMnAs during high-temperature molecular beam epitaxial growth von Xu, P., Qi, D., Ackerman, M.L., Barber, S.D., Thibado, P.M.

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Stranski-Krastanov growth of InSb, GaSb, and AlSb on GaAs: structure of the wetting layers von Bennett, B.R., Shanabrook, B.V., Thibado, P.M., Whitman, L.J., Magno, R.

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Atmospheric oxygen in Mn doped GaAs/GaAs(0 0 1) thin films grown by molecular beam epitaxy von Xu, J.F., Thibado, P.M., Awo-Affouda, C., Moore, R., LaBella, V.P.

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Time-evolution of the GaAs(0 0 1) pre-roughening process von Ding, Z, Bullock, D.W, Thibado, P.M, LaBella, V.P, Mullen, Kieran

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Dynamics of spontaneous roughening on the GaAs(0 0 1)-(2×4) surface von Ding, Z., Bullock, D.W., Oliver, W.F., Thibado, P.M., LaBella, V.P.

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Giant surface charge density of graphene resolved from scanning tunneling microscopy and first-principles theory von Xu, P., Yang, Y., Barber, S. D., Ackerman, M. L., Schoelz, J. K., Kornev, Igor A., Barraza-Lopez, Salvador, Bellaiche, L., Thibado, P. M.

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Activation energy for Ga diffusion on the GaAs(0 0 1)-(2×4) surface: an MBE-STM study von Yang, H, LaBella, V.P, Bullock, D.W, Ding, Z, Smathers, J.B, Thibado, P.M

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A RHEED and STM study of Sb-rich AlSb and GaSb (0 0 1) surface reconstructions von Thibado, P.M., Bennett, B.R., Shanabrook, B.V., Whitman, L.J.

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Scanning tunneling microscope combined with scanning electron microscope for the study of grain boundaries von Thibado, Paul M., Liang, Yong, Bonnell, Dawn A.

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Effect of silver additions on sintered Bi2Sr2CaCu2O8 von JONES, T. E, MCGINNIS, W. C, JACOBS, E. W, BOSS, R. D, THIBADO, P. M, BRIGGS, J. S, GLAD, W. E

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Substitutions of 3-d transition metal ions for copper in Bi2Sr2Can−1CunO2n+4 von Jones, T.E., Thibado, P.M., McGinnis, W.C., Boss, R.D., Schindler, J.W., Oseroff, S.

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