Decomposition kinetics of tertiarybutanol and diethylzinc used as precursor sources for the growth of ZnO von Thiandoume, C., Sallet, V., Triboulet, R., Gorochov, O.

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Temperature dependence of Zn1-xMgxO films grown on c-plane sapphire by metal organic vapor phase epitaxy von THIANDOUME, C, LUSSON, A, GALTIER, P, SALLET, V

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Morphology transition of one-dimensional ZnO grown by metal organic vapour phase epitaxy on (0 0 0 1)-ZnO substrate von Thiandoume, C., Barjon, J., Ka, O., Lusson, A., Galtier, P., Sallet, V.

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Metal organic vapour phase epitaxy of MgO films grown on c-plane Sapphire von Thiandoume, C., Lusson, A., Galtier, P., Sallet, V.

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p -type doping with N and Li acceptors of ZnS grown by metalorganic vapor phase epitaxy von Svob, L., Thiandoume, C., Lusson, A., Bouanani, M., Marfaing, Y., Gorochov, O.

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Some aspects of the MOCVD growth of ZnO on sapphire using tert-butanol von Sallet, V, Thiandoume, C, Rommeluere, J.F, Lusson, A, Rivière, A, Rivière, J.P, Gorochov, O, Triboulet, R, Muñoz-Sanjosé, V

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Temperature dependence of Zn sub(1-xMg) sub(x)O films grown on c-plane sapphire by metal organic vapor phase epitaxy von Thiandoume, C, Lusson, A, Galtier, P, Sallet, V

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MOVPE growth of ZnS on (1 0 0)GaAs using dimethylzinc and ditertiarybutyl sulphide precursors von Thiandoume, C, Ka, O, Lusson, A, Gorochov, O

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Temperature dependence of Zn 1− x Mg x O films grown on c-plane sapphire by metal organic vapor phase epitaxy von Thiandoume, C., Lusson, A., Galtier, P., Sallet, V.

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Modeling and process optimization of ZnSe and ZnS epitaxial growth in a vertical metallorganic vapor-phase epitaxy reactor von THIANDOUME, C, ANGERMEIER, D, GOROCHOV, O

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Optical study of ZnO∕ZnMgO quantum wells grown by metal organic vapor phase epitaxy on ZnO substrates von Lusson, A., Hanèche, N., Thiandoume, C., Sallet, V., Galtier, P.

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Raman analysis of LO phonon-plasmon coupled modes at ZnS:N/(n+, p+)-GaAs interfaces von PAGES, O, LAZREG, A, ZAOUI, A, CERTIER, M, THIANDOUME, C, BOUANANI, A, SVOB, L, GOROCHOV, O, BORMANN, D

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MOVPE growth of ZnSxSe1−x/GaAs(1 0 0) using ditertiarybutylselenium, tertiarybutylmercaptan and dimethylzinc triethylamine as precursors von Thiandoume, C., Ka, O., Lusson, A., Cohen, C., Bouanani, A., Rommeluere, M., Tromson-Carli, A., Gorochov, O.

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Metal Organic Vapor Phase Epitaxy Growth of MgO, ZnO, and Mg(x)Zn(1-x)O von Thiandoume, C, Sallet, V, Lusson, A, Galtier, Pierre

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MOVPE growth of ZnS xSe 1− x/GaAs(1 0 0) using ditertiarybutylselenium, tertiarybutylmercaptan and dimethylzinc triethylamine as precursors von Thiandoume, C., Ka, O., Lusson, A., Cohen, C., Bouanani, A., Rommeluere, M., Tromson-Carli, A., Gorochov, O.

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Optical study of Zn O ∕ Zn Mg O quantum wells grown by metal organic vapor phase epitaxy on ZnO substrates von Lusson, A., Hanèche, N., Thiandoume, C., Sallet, V., Galtier, P.

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MOVPE growth of ZnSxSe1-x/GaAs(1 0 0) using ditertiarybutylselenium, tertiarybutylmercaptan and dimethylzinc triethylamine as precursors von THIANDOUME, C, KA, O, LUSSON, A, COHEN, C, BOUANANI, A, ROMMELUERE, M, TROMSON-CARLI, A, GOROCHOV, O

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