Germanium diffusion and strain relaxation in Si/Si1−xGex/Si structures von Van De Walle, G.F.A., Van Ijzendoorn, L.J., Van Gorkum, A.A., Van Den Heuvel, R.A., Theunissen, A.M.L., Gravesteijn, D.J.

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Single crystalline CoSi2 layers formed by Co implantation into Si von Van Ommen, A.H., Ottenheim, J.J.M., Bulle-Lieuwma, C.W.T., Theunissen, A.M.L.

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Single crystalline CoSi 2 layers formed by Co implantation into Si von Van Ommen, A.H., Ottenheim, J.J.M., Bulle-Lieuwma, C.W.T., Theunissen, A.M.L.

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Diffusion and strain relaxation in Si/Si1−xGex/Si structures studied with Rutherford backscattering spectrometry von van Ijzendoorn, L.J., van de Walle, G.F.A., van Gorkum, A.A., Theunissen, A.M.L., van den Heuvel, R.A., Barrett, J.H.

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Hydrogen profiling by proton-proton scattering von Willemsen, M.F.C., Theunissen, A.M.L., Kuiper, A.E.T.

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Germanium diffusion and strain relaxation in Si/Si 1− xGe x/Si structures von Van De Walle, G.F.A., Van Ijzendoorn, L.J., Van Gorkum, A.A., Van Den Heuvel, R.A., Theunissen, A.M.L., Gravesteijn, D.J.

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Diffusion and strain relaxation in Si/Si 1− xGe x/Si structures studied with Rutherford backscattering spectrometry von van Ijzendoorn, L.J., van de Walle, G.F.A., van Gorkum, A.A., Theunissen, A.M.L., van den Heuvel, R.A., Barrett, J.H.

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