Optical properties and damage analysis of GaAs single crystals partly amorphized by ion implantation von ERMAN, M, THEETEN, J. B, CHAMBON, P, KELSO, S. M, ASPNES, D. E

Volltext

Spatially resolved ellipsometry von ERMAN, M, THEETEN, J. B

Volltext

Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown Oxide von Aspnes, D. E., Theeten, J. B.

Volltext

Analysis of ion-implanted GaAs by spectroscopic ellipsometry von Erman, M., Theeten, J.B.

Volltext

Thermal nitridation of silicon dioxide films von Habraken, F. H. P. M., Kuiper, A. E. T., Tamminga, Y., Theeten, J. B.

Volltext

Dielectric function of Si-SiO2 and Si-Si3N4 mixtures von Aspnes, D. E., Theeten, J. B.

Volltext

Optical Properties of the Interface between Si and Its Thermally Grown Oxide von Aspnes, D. E., Theeten, J. B.

Volltext

Low loss waveguides grown on GaAs using localized vapor phase epitaxy von ERMAN, M, VODJDANI, N, THEETEN, J. B, CABANIE, J. P

Volltext

Continuous transition from multiple quantum-well regime to superlattice regime in GaAlAs/GaAs system as observed by spectroscopic ellipsometry with high lateral resolution von ERMAN, M, ALIBERT, C, THEETEN, J. B, FRIJLINK, P, CATTE, B

Volltext

Chemical and structural analysis by ellipsometry and x-ray reflectometry of thin sulfide layers grown on InP von Gendry, M., Durand, J., Erman, M., Theeten, J.B., Nevot, L., Pardo, B.

Volltext

Electronic states and thicknesses of GaAs/GaAlAs quantum wells as measured by electroreflectance and spectroscopic ellipsometry von Erman, M., Theeten, J. B., Frijlink, P., Gaillard, S., Hia, Fan Jia, Alibert, C.

Volltext

Real-time and spectroscopic ellipsometry of film growth: Application to multilayer systems in plasma and CVD processing of semiconductors von Theeten, J.B.

Volltext

Characterization of low-pressure chemical-vapor-deposited and thermally-grown silicon nitride films von Habraken, F. H. P. M., Kuiper, A. E. T., Oostrom, A. v., Tamminga, Y., Theeten, J. B.

Volltext

System architecture for a multi-media enabled mobile terminal von Drude, S., Atorf, M., Chivallier, L., Currie, K., Theeten, J.-B.

Volltext

Spectroscopic ellipsometry and Raman scattering study of the annealing behavior of Be-implanted GaAs von CHAMBON, P, ERMAN, M, THEETEN, J. B, PREVOT, B, SCHWAB, C

Volltext

A new resonant ellipsometric technique for characterizing the interface between GaAs and its plasma-grown oxide von Theeten, J. B., Aspnes, D. E., Chang, R. P. H.

Volltext

Growth of dielectric films on semiconductors and metals using a multipole plasma von Gourrier, S., Friedel, P., Dimitriou, P., Theeten, J.B.

Volltext

Comparative LEED and RHEED examination of stepped surfaces; Application to Cu(111) and GaAs(100) vicinal surfaces von Hottier, F., Theeten, J.B., Masson, A., Domange, J.L.

Volltext

On-time determination of the composition of III-V ternary layers during VPE growth von Theeten, J. B., Hottier, F., Hallais, J.

Volltext

Structural analysis and optical characterization of low loss GaAs waveguides fabricated by selective epitaxy von VODJDANI, N, ERMAN, M, THEETEN, J. B

Volltext