Role of Shallow Bound States in Emission Processes of Rare-Earth Doped Semiconductors von Gregorkiewicz, T., Thao, D.T.X., Langer, J.M.

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Spectroscopic probing of defect-related energy storage in silicon doped with erbium von Thao, D.T.X, Gregorkiewicz, T, Langer, J.M

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The photoluminescence mechanism of erbium in silicon: intensity dependence on excitation power and temperature von Thao, D.T.X, Ammerlaan, C.A.J, Gregorkiewicz, T

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Tracking recombination processes in Si : Er with a free-electron laser von Gregorkiewicz, T., Thao, D.T.X., Langer, J.M., Bekman, H.H.P.Th

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Excitation mechanism of Er in Si studied with a free-electron laser von Gregorkiewicz, T, Thao, D.T.X, Tsimperidis, I, Bekman, H.H.P.Th, Langerak, C.J.G.M, Michel, J, Kimerling, L.C

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Photoluminescence of Erbium-Doped Silicon: Temperature Dependence von Gregorkiewicz, T., Ammerlaan, C.A.J., Krasil'nik, Z.F., Andreev, Boris A., Thao, D.T.X.

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