Orientation and structure of triple step staircase on vicinal Si(1 1 1) surfaces von Teys, S.A., Romanyuk, K.N., Zhachuk, R.A., Olshanetsky, B.Z.

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Formation of Ge nanoislands before the completion of a wetting layer in the Ge/Si(1 1 1) system von Teys, S.A., Talochkin, A.B., Olshanetsky, B.Z.

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Different growth mechanisms of Ge by Stranski-Krastanow on Si (111) and (001) surfaces: An STM study von Teys, S.A.

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MBE growth of ultra small coherent Ge quantum dots in silicon for applications in nanoelectronics von Pchelyakov, O.P., Nikiforov, A.I., Olshanetsky, B.Z., Teys, S.A., Yakimov, A.I., Chikichev, S.I.

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Structure of initial Ge nanoclusters at the edges of Si(111) steps with the front in the 〈−1−12〉 direction von Teys, S.A., Romanyuk, K.N., Olshanetsky, B.Z.

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Structure of initial Ge nanoclusters at the edges of Si(1 1 1) steps with the front in the 〈-1 -1 2〉 direction von TEYS, S. A, ROMANYUK, K. N, OLSHANETSKY, B. Z

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Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy von Tuktamyshev, A. R., Mashanov, V. I., Timofeev, V. A., Nikiforov, A. I., Teys, S. A.

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Ge and GexSi1−x islands formation on GexSi1−x solid solution surface von Nikiforov, A.I., Timofeev, V.A., Teys, S.A., Gutakovsky, A.K., Pchelyakov, O.P.

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Nucleation and growth of ordered groups of SiGe quantum dots von Zinovyev, V. A., Dvurechenskii, A. V., Kuchinskaya, P. A., Armbrister, V. A., Teys, S. A., Shklyaev, A. A., Mudryi, A. V.

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Influence of the Si-7 x 7 surface reconstruction on the diffusion of strontium atoms von Zhachuk, R.A, Teys, S.A, Olshanetsky, B.Z

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Tunneling transport through passivated CdS nanocrystal arrays grown by the Langmuir-Blodgett method von Svit, K. A., Protasov, D. Yu, Sveshnikova, L. L., Shestakov, A. K., Teys, S. A., Zhuravlev, K. S.

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Molecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiation von Smagina, Zh.V., Novikov, P.L., Zinovyev, V.A., Armbrister, V.A., Teys, S.A., Dvurechenskii, A.V.

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Formation of strontium atomic chains on the singular and stepped Si(111) surfaces von Zhachuk, R. A., Teys, S. A., Olshanetsky, B. Z.

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Formation of ordered arrays of Ag nanowires and nanodots on Si(5 5 7) surface von Zhachuk, R.A., Teys, S.A., Dolbak, A.E., Olshanetsky, B.Z.

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The influence of elastic strains on the growth and properties of vertically ordered Ge “hut”-clusters von Nikiforov, A.I., Ulyanov, V.V., Teys, S.A., Gutakovsky, A.K., Pchelyakov, O.P.

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Effect of nickel on clean silicon surfaces: Transport and structure von Dolbak, A.E., Olshanetsky, B.Z., Stenin, S.I., Teys, S.A., Gavrilova, T.A.

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The initial stages of NiSi2 epitaxy on clean Si(111), Si(100) and Si(110) surfaces von DOLBAK, A. E, OLSHANETSKY, B. Z, STENIN, S. I, TEYS, S. A, GAVRILOVA, T. A

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Edge-dimer row – The reason of three-bilayer steps and islands stability on Si(1 1 1)-7 × 7 von Neizvestny, I.G., Romanyuk, K.N., Shwartz, N.L., Teys, S.A., Yanovitskaya, Z.Sh, Zverev, A.V.

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Co interaction with clean silicon surfaces von Dolbak, A.E., Olshanetsky, B.Z., Teys, S.A.

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Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxy von Dvurechenskii, A.V., Smagina, J.V., Groetzschel, R., Zinovyev, V.A., Armbrister, V.A., Novikov, P.L., Teys, S.A., Gutakovskii, A.K.

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