Characteristics of 4H–SiC MOS interface annealed in N2O von Fujihira, Keiko, Tarui, Yoichiro, Imaizumi, Masayuki, Ohtsuka, Ken-ichi, Takami, Tetsuya, Shiramizu, Tatsuya, Kawase, Kazumasa, Tanimura, Jyunji, Ozeki, Tatsuo

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TDDB Measurement of Gate SiO2 on 4H-SiC Formed by Chemical Vapor Deposition von Takami, Tetsuya, Imaizumi, Masayuki, Fujihira, Keiko, Yoshida, Shohei, Oomori, Tatsuo, Miura, Naruhisa, Nakao, Yukiyasu

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Switching Characteristics of SiC-MOSFET and SBD Power Modules von Watanabe, Tomokatsu, Tarui, Yoichiro, Takami, Tetsuya, Ozeki, Tatsuo, Nakatake, Hiroshi, Imaizumi, Masayuki, Kinouchi, Shin Ichi, Fujihira, Keiko, Nakao, Yukiyasu, Miura, Naruhisa

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Effects of N2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability von Imaizumi, Masayuki, Fujihira, Keiko, Tarui, Yoichiro, Ohtsuka, Kenichi, Takami, Tetsuya

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SPECULAR SURFACE MORPHOLOGY OF ALUMINUM-IMPLANTED 4H-SiC(000-1) BY SiH4-ADDED Ar ANNEAL von Fujihira, K, Tarui, Y, Imaizumi, M, Ohtsuka, K, Takami, T, Ozeki, T

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Successful enhancement of lifetime for SiO2 on 4H-SiC by N2O anneal von FUJIHIRA, Keiko, MIURA, Naruhisa, SHIOZAWA, Katsuomi, IMAIZUMI, Masayuki, OHTSUKA, Ken-Ichi, TAKAMI, Tetsuya

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Significant Improvement in Ba 1-x K x BiO 3 Grain Boundary Junctions on MgO Bicrystal Substrates by Minimal BaBiO 3 Sputtering von Yukihiko Wada, Yukihiko Wada, Tetsuya Takami, Tetsuya Takami, Ken'ichi Kuroda andTatsuo Ozeki, Ken'ichi Kuroda andTatsuo Ozeki

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Improvement in Ba 1-x K x BiO 3 Grain Boundary Junctions by Ar + Beam Irradiation von Yukihiko Wada, Yukihiko Wada, Tetsuya Takami, Tetsuya Takami, Ken'ichi Kuroda, Ken'ichi Kuroda, Tatsuo Ozeki, Tatsuo Ozeki

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YBaCuO/PrBaCuO/YBaCuO Trilayer Junctions on Vicinal Substrates von Kuroda, Ken'ichi, Takami, Tetsuya, Nishi, Kazuhisa, Wada, Yukihiko, Ozeki, Tatsuo

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Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body von Watanabe, Tomokatsu, Takami, Tetsuya, Imaizumi, Masayuki, Fujihira, Keiko, Yutani, Naoki, Ohtsuka, Kenichi, Oomori, Tatsuo, Miura, Naruhisa, Nakao, Yukiyasu

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Transient Temperature Response of Supported Rh Nanoparticles in Photothermal Dry Reforming of MethaneAn Operando Dispersive X‑ray Absorption Spectroscopy Study von Takami, Daichi, Yamamoto, Akira, Kato, Kazuo, Shishido, Tetsuya, Yoshida, Hisao

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Green fluorescent protein-based lactate and pyruvate indicators suitable for biochemical assays and live cell imaging von Harada, Kazuki, Chihara, Takami, Hayasaka, Yuki, Mita, Marie, Takizawa, Mai, Ishida, Kentaro, Arai, Mary, Tsuno, Saki, Matsumoto, Mitsuharu, Ishihara, Takeshi, Ueda, Hiroshi, Kitaguchi, Tetsuya, Tsuboi, Takashi

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Fabrication and Performance of 1.2 kV, 12.9 mΩcm2 4H-SiC Epilayer Channel MOSFET von Watanabe, Tomokatsu, Sumitani, Hiroaki, Tarui, Yoichiro, Takami, Tetsuya, Ozeki, Tatsuo, Imaizumi, Masayuki, Fujihira, Keiko, Oomori, Tatsuo, Miura, Naruhisa, Nakao, Yukiyasu

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Fabrication of YBCO multi-layer wiring with a polished PBCO insulator von Wada, Y., Kuroda, K., Takami, T.

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Effects of N20 Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability von Fujihira, Keiko, Tarui, Yoichiro, Ohtsuka, Ken-Ichi, Imaizumi, Masayuki, Takami, Tetsuya

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Comprehensive Comparative Genomics and Phenotyping of Methylobacterium Species von Alessa, Ola, Ogura, Yoshitoshi, Fujitani, Yoshiko, Takami, Hideto, Hayashi, Tetsuya, Sahin, Nurettin, Tani, Akio

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Fabrication of Full High-T c Superconducting YBa 2 Cu 3 O 7-x Trilayer Junctions Using a Polishing Technique von Kuroda, Ken'ichi, Wada, Yukihiko, Takami, Tetsuya, Ozeki, Tatsuo

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45° grain boundary junctions in (001)-oriented BiSrCaCuO films von TAKAMI, T, KURODA, K, KOJIMA, K, KATAOKA, M, TANIMURA, J, WADA, O, OGAMA, T

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FABRICATION OF FULL HIGH-TC SUPERCONDUCTING YBa2Cu3O7-x TRILAYER JUNCTIONS USING A POLISHING TECHNIQUE von Kuroda, K, Wada, Y, Takami, T, Ozeki, T

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In-plane orientation and coincidence site lattice relation of (001) Bi2Sr2CaCu2Ox formed on (001) MgO von Kataoka, Masayuki, Wada, Osamu, Tanimura, Junji, Ogama, Tetsuo, Kuroda, Ken'ichi, Takami, Tetsuya, Kojima, Kazuyoshi

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