Electronic properties of MAPbxSn1−xI3 hybrid perovskite alloys: k.p modeling for tetragonal crystal symmetry with C4v point group von Saïdi, I., Boujdaria, K., Chamarro, M., Testelin, C.

Volltext

Multiband k·p Model for Tetragonal Crystals: Application to Hybrid Halide Perovskite Nanocrystals von Ben Aich, R, Ben Radhia, S, Boujdaria, K, Chamarro, M, Testelin, C

Volltext

Spin relaxation time of donor-bound electrons in a CdTe quantum well von Garcia-Arellano, G., Bernardot, F., Karczewski, G., Testelin, C., Chamarro, M.

Volltext

Electron exchange energy of neutral donors inside a quantum well von Garcia-Arellano, G., Bernardot, F., Testelin, C., Chamarro, M.

Volltext

Hole-nuclear spin interaction in quantum dots von Eble, B, Testelin, C, Desfonds, P, Bernardot, F, Balocchi, A, Amand, T, Miard, A, Lemaître, A, Marie, X, Chamarro, M

Volltext

Temperature dependence of the spin relaxation time of donor-bound electrons immersed in a CdTe quantum well von Garcia-Arellano, G., Bernardot, F., Karczewski, G., Testelin, C., Chamarro, M.

Volltext

Excitonic complexes in strain-free and highly symmetric GaAs quantum dots fabricated by filling of self-assembled nanoholes von Trabelsi, Z., Yahyaoui, M., Boujdaria, K., Chamarro, M., Testelin, C.

Volltext

Effect of picosecond strain pulses on thin layers of the ferromagnetic semiconductor (Ga,Mn)(As,P) von Thevenard, L., Peronne, E., Gourdon, C., Testelin, C., Cubukcu, M., Charron, E., Vincent, S., Lemaître, A., Perrin, B.

Volltext

The influence of phosphorus content on magnetic anisotropy in ferromagnetic (Ga, Mn) (As, P)/GaAs thin films von Yahyaoui, M, Boujdaria, K, Cubukcu, M, Testelin, C, Gourdon, C

Volltext

Nanosecond spin coherence of excitons bound to acceptors in a CdTe quantum well von Grinberg, P., Bernardot, F., Eble, B., Karczewski, G., Testelin, C., Chamarro, M.

Volltext

Band parameters of InGaAs/GaAs quantum dots: electronic properties study von Yahyaoui, M, Sellami, K, Boujdaria, K, Chamarro, M, Testelin, C

Volltext

Effects of strain on the optoelectronic properties of annealed InGaAs GaAs self-assembled quantum dots von Yahyaoui, M, Sellami, K, Ben Radhia, S, Boujdaria, K, Chamarro, M, Eble, B, Testelin, C, Lemaître, A

Volltext

Optical properties of type-II AlInAs/AlGaAs quantum dots by photoluminescence studies von Saïdi, I., Neffati, R., Ben Radhia, S., Boujdaria, K., Lemaître, A., Bernardot, F., Testelin, C.

Volltext

Two-phonon process and hyperfine interaction limiting slow hole-spin relaxation time in InAs/GaAs quantum dots von Fras, F., Eble, B., Desfonds, P., Bernardot, F., Testelin, C., Chamarro, M., Miard, A., Lemaître, A.

Volltext

Fine structure of bright and dark excitons in asymmetric droplet epitaxy GaAs/AlGaAs quantum dots von Mekni, H., Pankratov, A., Ben Radhia, S., Boujdaria, K., Chamarro, M., Testelin, C.

Volltext

Effect of AlGaAs composition on the type-I to type-II transition in AlInAs/AlGaAs self-assembled quantum dots von Neffati, R, Saïdi, I, Radhia, S Ben, Boujdaria, K, Testelin, C

Volltext

Longitudinal spin relaxation time of donor-bound electrons in a CdTe quantum well von Garcia-Arellano, G., Bernardot, F., Karczewski, G., Testelin, C., Chamarro, M.

Volltext

Electronic properties of MAPb x Sn1− x I3 hybrid perovskite alloys: k.p modeling for tetragonal crystal symmetry with C4 v point group von Saïdi, I., Boujdaria, K., Chamarro, M., Testelin, C.

Volltext

Antimony composition impact on band alignment in InAs/GaAsSb quantum dots von Saïdi, I., Boujdaria, K., Testelin, C.

Volltext

Effects of thickness layer on the photoluminescence properties of InAlAs/GaAlAs quantum dots von Daly, A. Ben, Bernardot, F., Barisien, T., Galopin, E., Lemaître, A., Maaref, M. A., Testelin, C.

Volltext