Control of germanium diffusion using low quantities of co-implanted silicon isotopes von Nélis, A., Barba, D., Terwagne, G.

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18O(p,α)15N isotopic tracing of germanium diffusion in SiO2/Si films von Nélis, A., Vickridge, I., Ganem, J.-J., Briand, E., Terwagne, G.

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On the traceably accurate voltage calibration of electrostatic accelerators von Colaux, J.L., Terwagne, G., Jeynes, C.

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New polyvalent low background γ-ray setup at UNamur: Application to S-factor measurements for the 13C(p,γ)14N reaction von Debarsy, P-L., Baseil, L., Stasser, C., Tabarrant, T., Colaux, J. L., Heuskin, A.-C., Terwagne, G.

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Blocking germanium diffusion inside silicon dioxide using a co-implanted silicon barrier von Barba, D., Wang, C., Nélis, A., Terwagne, G., Rosei, F.

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Control of the Ge nanocrystal synthesis by co-implantation of Si von Barba, D., Demarche, J., Martin, F., Terwagne, G., Ross, G. G.

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Influence of silicon dangling bonds on germanium thermal diffusion within SiO2 glass von Barba, D., Cai, R. S., Demarche, J., Wang, Y. Q., Terwagne, G., Rosei, F., Martin, F., Ross, G. G.

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Nanocavities and germanium nanocrystals produced by Ge ion implantation in fused silica von Barba, D, Martin, F, Demarche, J, Terwagne, G, Ross, G G

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Ionoluminescence induced by low-energy proton excitation of Si nanocrystals embedded in silica von Demarche, J., Barba, D., Ross, G.G., Terwagne, G.

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Influence of oxygen co-implantation on germanium out-diffusion and nanoclustering in SiO2/Si films von Nélis, A., Haye, E., Terwagne, G.

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Formation of crystalline Si1-xGex top layers by ion implantation in crystalline silicon von Nélis, A., Chicoine, M., Schiettekatte, F., Terwagne, G.

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Influence of nitrogen on the growth and luminescence of silicon nanocrystals embedded in silica von Bolduc, M., Genard, G., Yedji, M., Barba, D., Martin, F., Terwagne, G., Ross, G. G.

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Study of ZrN layers deposited by reactive magnetron sputtering von Del Re, M., Gouttebaron, R., Dauchot, J.-P., Leclère, P., Terwagne, G., Hecq, M.

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Polymer coatings to functionalize carbon nanotubes von Abou Rich, S., Yedji, M., Amadou, J., Terwagne, G., Felten, A., Avril, L., Pireaux, J.-J.

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Probing neutron-hidden neutron transitions with the MURMUR experiment von Stasser, Coraline, Terwagne, Guy, Lamblin, Jacob, Méplan, Olivier, Pignol, Guillaume, Coupé, Bernard, Kalcheva, Silva, Van Dyck, Steven, Sarrazin, Michaël

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Depth-profiling of implanted 28Si by (α,α) and (α,p 0) reactions von Demarche, J., Yedji, M., Terwagne, G.

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Influence of substrate temperature on titanium oxynitride thin films prepared by reactive sputtering von Chappé, J.-M., Martin, N., Pierson, J.F., Terwagne, G., Lintymer, J., Gavoille, J., Takadoum, J.

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O-18(p,alpha)N-15 isotopic tracing of germanium diffusion in SiO2/Si films von Nelis, A., Vickridge, I., Ganem, J. -J., Briand, E., Terwagne, G.

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Silicon nanocrystal synthesis by implantation of natural Si isotopes von Barba, D., Koshel, D., Martin, F., Ross, G.G., Chicoine, M., Schiettekatte, F., Yedji, M., Demarche, J., Terwagne, G.

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Study of carbon nitride compounds synthesised by co-implantation of 13C and 14N in copper at different temperatures von Colaux, J.L., Louette, P., Colomer, J.-F., Edmondson, P.D., Donnelly, S.E., Terwagne, G.

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