Five-step plasma-enhanced atomic layer etching of silicon nitride with a stable etched amount per cycle von Hirata, Akiko, Fukasawa, Masanaga, Tercero, Jomar U., Kugimiya, Katsuhisa, Hagimoto, Yoshiya, Karahashi, Kazuhiro, Hamaguchi, Satoshi, Iwamoto, Hayato

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High-throughput SiN ALE: surface reaction and ion-induced damage generation mechanisms von Hirata, Akiko, Fukasawa, Masanaga, Tercero, Jomar Unico, Kugimiya, Katsuhisa, Hagimoto, Yoshiya, Karahashi, Kazuhiro, Hamaguchi, Satoshi, Iwamoto, Hayato

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Surface chemical reactions of etch stop prevention in plasma-enhanced atomic layer etching of silicon nitride von Tercero, Jomar U., Hirata, Akiko, Isobe, Michiro, Karahashi, Kazuhiro, Fukasawa, Masanaga, Hamaguchi, Satoshi

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Effect of Hydrogen in the Plasma-Enhanced Atomic Layer Etching of Silicon Nitride: A Molecular Dynamics Study von Tercero, Jomar Unico, Hirata, Akiko, Isobe, Michiro, Fukasawa, Masagana, Vasquez, Magdaleno, Jr, Hamaguchi, Satoshi

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Analysis of Hydrogen-induced Damage in SiN Atomic Layer Etching von Hirata, Akiko, Fukasawa, Masanaga, Kugimiya, Katsuhisa, Hagimoto, Yoshiya, Iwamoto, Hayato, Jomar, Tercero, Isobe, Michiro, Ito, Tomoko, Karahashi, Kazuhiro, Hamaguchi, Satoshi

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SiN Atomic Layer EtchingのHダメージ解析 von 平田, 瑛子, 深沢, 正永, 釘宮, 克尚, 萩本, 賢哉, 岩元, 勇人, Tercero, Jomar, 礒部, 倫郎, 伊藤, 智子, 唐橋, 一浩, 浜口, 智志

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