Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition von Tadao Hashimoto, Tadao Hashimoto, Masaaki Yuri, Masaaki Yuri, Masahiro Ishida, Masahiro Ishida, Yoshitami Terakoshi, Yoshitami Terakoshi, Osamu Imafuji, Osamu Imafuji, Takashi Sugino, Takashi Sugino, Kunio Itoh, Kunio Itoh

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Structural investigation of sapphire surface after nitridation von Hashimoto, Tadao, Terakoshi, Yoshitami, Ishida, Masahiro, Yuri, Masaaki, Imafuji, Osamu, Sugino, Takashi, Yoshikawa, Akio, Itoh, Kunio

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Quantitative study of nitridated sapphire surfaces by x-ray photoelectron spectroscopy von Hashimoto, Tadao, Terakoshi, Yoshitami, Yuri, Masaaki, Ishida, Masahiro, Imafuji, Osamu, Sugino, Takashi, Itoh, Kunio

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Inheritance of zinc-blende structure from 3C-SiC/Si(001) substrate in growth of GaN by MOCVD von HASHIMOTO, T, IMAFUJI, O, ISHIDA, M, TERAKOSHI, Y, SUGINO, T, YOSHIKAWA, A, ITOH, K, SHIRAFUJI, J

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Inheritance of zinc-blende structure from [formula omitted] substrate in growth of GaN by MOCVD von Hashimoto, Tadao, Imafuji, Osamu, Ishida, Masahiro, Terakoshi, Yoshitami, Sugino, Takashi, Yoshikawa, Akio, Itoh, Kunio, Shirafuji, Junji

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