Ageing of GaN HEMT devices： which degradation indicators von Divay, A., Latry, O., Duperrier, C., Temcamani, F.

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Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test von Fonder, J.-B., Chevalier, L., Genevois, C., Latry, O., Duperrier, C., Temcamani, F., Maanane, H.

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Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life von Fonder, J.-B., Latry, O., Duperrier, C., Stanislawiak, M., Maanane, H., Eudeline, P., Temcamani, F.

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Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode von Divay, A., Duperrier, C., Temcamani, F., Latry, O.

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An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors von Divay, A., Masmoudi, M., Latry, O., Duperrier, C., Temcamani, F.

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Trap-free process and thermal limitations on large-periphery SiC MESFET for RF and microwave power von Villard, F., Prigent, J.-P., Morvan, E., Dua, C., Brylinski, C., Temcamani, F., Pouvil, P.

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Gate resistance influence on the impedance matching for common gate MOSFET amplifiers von Andriesei, C., Temcamani, F.

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A 1.3-GHz SiGe active filter using a finite-gain amplifier von Temcamani, F., Diab, H., Régis, M., Gautier, J. L.

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Silicon carbide MESFETs performances and application in broadcast power amplifiers von Temcamani, F., Pouvil, P., Noblanc, O., Brylinski, C., Bannelier, P., Darges, B., Prigent, J.P.

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Power amplification with silicon carbide MESFET von Broch, J. F., Temcamani, F., Pouvil, P., Noblanc, O., Prigent, J. P.

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Improved RF CMOS active inductor with high self resonant frequency von Andriesei, C, Goras, L, Temcamani, F, Delacressonniere, B

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New design approach for active filter using MMIC technology von Dousti, M., Delacressonniere, B., Temcamani, F., Gautier, J. L.

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Active MMIC wideband time delay von Dousti, M., Delacressonniere, B., Temcamani, F., Gautier, J. L.

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Trap-free process and thermal limitations on large-periphery SiC MESFET for RF and microwave power von Villard, F, Prigent, J.-P., Morvan, E, Dua, C, Brylinski, C, Temcamani, F, Pouvil, P

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A 71.9% power-added-efficiency inverse Class-FLDMOS von Ouyahia, A., Duperrier, C., Tolant, C., Temcamani, F., Eudeline, Ph

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Considerations on the RLC model of CMOS transistor only simulated inductors von Andriesei, C., Patache, N., Goras, L., Temcamani, F., Delacressonniere, B.

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Avalanche and Tunneling Breakdown Mechanisms in HEMT's Power Structures von Crosnier, Y., Temcamani, F., Lippens, D., Salmer, G.

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A reliability-based AlGaN/GaN HEMT model considering high drain bias voltage RF ageing von Fonder, J., Duperrier, C., Latry, O., Stanislawiak, M., Maanane, H., Eudeline, P., Temcamani, F.

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Frequency enhancement method applied to a CMOS RF simulated inductor BP filter von Andriesei, C., Goras, L., Temcamani, F., Delacressoniere, B.

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CMOS RF Bandpass Filter Design using a Compensated Active Inductor von Iosr Journals, W. El Hamdani, M.ALAMI, M.El Bekkali, F. Temcamani, B.Delacressonnire

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